 | 2010 |
| 4 |  | Yang Lin,
David E. Kotecki:
A 2.9-30.3GHz fourth-harmonic voltage-controlled oscillator in 130nm SiGe BiCMOS technology.
ICECS 2010: 396-399 |
| 3 |  | Yang Lin,
David E. Kotecki:
A 0.8-13.4GHz combined voltage-controlled oscillator with an exclusive-OR in 130nm SiGe BiCMOS.
ICECS 2010: 426-429 |
| 2009 |
| 2 |  | Yang Lin,
David E. Kotecki:
A 312GHz fourth-harmonic voltage-controlled oscillator in 130nm SiGe BiCMOS technology.
ICECS 2009: 747-750 |
| 1999 |
| 1 |  | David E. Kotecki,
John D. Baniecki,
Hua Shen,
Robert B. Laibowitz,
Katherine L. Saenger,
Jingyu Jenny Lian,
Thomas M. Shaw,
Satish D. Athavale,
Cyril Cabral Jr.,
Peter R. Duncombe,
Martin Gutsche,
Gerhard Kunkel,
Young-Jin Park,
Yun-Yu Wang,
Richard Wise:
(Ba, Sr)TiO3 dielectrics for future stacked- capacitor DRAM.
IBM Journal of Research and Development 43(3): 367-382 (1999) |