 | 2008 |
| 3 |  | D. Donoval,
M. Florovic,
D. Gregusová,
J. Kovác,
P. Kordos:
High-temperature performance of AlGaN/GaN HFETs and MOSHFETs.
Microelectronics Reliability 48(10): 1669-1672 (2008) |
| 2005 |
| 2 |  | P. Kordos,
J. Bernát,
M. Marso:
Impact of layer structure on performance of unpassivated AlGaN/GaN HEMT.
Microelectronics Journal 36(3-6): 438-441 (2005) |
| 2003 |
| 1 |  | P. Javorka,
A. Alam,
M. Marso,
M. Wolter,
J. Kuzmik,
A. Fox,
M. Heuken,
P. Kordos:
Material and device issues of AlGaN/GaN HEMTs on silicon substrates.
Microelectronics Journal 34(5-8): 435-437 (2003) |