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| 2012 | ||
|---|---|---|
| 4 | J. Hájek, V. Papez, B. Kojecký: Investigation of flicker noise in silicon diodes under reverse bias. Microelectronics Reliability 52(3): 469-474 (2012) | |
| 2008 | ||
| 3 | V. Papez, B. Kojecký, D. Sámal: Reliability of reverse properties of power semiconductor devices: : Influence of surface dielectric layer and its experimental verification. Microelectronics Journal 39(6): 851-856 (2008) | |
| 2006 | ||
| 2 | B. Kojecký, V. Papez, D. Sámal: Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices. Microelectronics Journal 37(3): 269-274 (2006) | |
| 2003 | ||
| 1 | V. Papez, B. Kojecký, J. Kozísek, J. Hejhal: Transient effects on high voltage diode stack under reverse bias. Microelectronics Reliability 43(4): 557-564 (2003) | |
| 1 | J. Hájek | [4] |
| 2 | J. Hejhal | [1] |
| 3 | J. Kozísek | [1] |
| 4 | V. Papez | [1] [2] [3] [4] |
| 5 | D. Sámal | [2] [3] |
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