 | 2008 |
|---|
| 4 |       | Shun Sugiura,
Shigeru Kishimoto,
Takashi Mizutani,
Masayuki Kuroda,
Tetsuzo Ueda,
Tsuyoshi Tanaka:
Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide.
IEICE Transactions 91-C(7): 1001-1003 (2008) |
| 3 | | Koichi Maezawa,
Ikuo Soga,
Shigeru Kishimoto,
Takashi Mizutani,
Kazuhiro Akamatsu:
A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch.
IEICE Transactions 91-C(7): 1025-1030 (2008) |
| 2 | | Masafumi Ito,
Shigeru Kishimoto,
Fumihiko Nakamura,
Takashi Mizutani:
Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer.
IEICE Transactions 91-C(7): 989-993 (2008) |
| 2006 |
|---|
| 1 | | Youhei Ookawa,
Shigeru Kishimoto,
Koichi Maezawa,
Takashi Mizutani:
Novel Resonant Tunneling Diode Oscillator Capable of Large Output Power Operation.
IEICE Transactions 89-C(7): 999-1004 (2006) |
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