 | 2011 |
|---|
| 11 |       | J. P. Ousten,
Zoubir Khatir:
Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications.
Microelectronics Reliability 51(9-11): 1830-1835 (2011) |
| 2010 |
|---|
| 10 | | Zoubir Khatir,
L. Dupont,
A. Ibrahim:
Investigations on junction temperature estimation based on junction voltage measurements.
Microelectronics Reliability 50(9-11): 1506-1510 (2010) |
| 9 | | M. Bouarroudj-Berkani,
D. Othman,
Stéphane Lefebvre,
S. Moumen,
Zoubir Khatir,
T. Ben Sallah:
Ageing of SiC JFET transistors under repetitive current limitation conditions.
Microelectronics Reliability 50(9-11): 1532-1537 (2010) |
| 2009 |
|---|
| 8 | | S. Pietranico,
S. Pommier,
Stéphane Lefebvre,
Zoubir Khatir,
S. Bontemps:
Characterisation of power modules ceramic substrates for reliability aspects.
Microelectronics Reliability 49(9-11): 1260-1266 (2009) |
| 7 | | Mounira Berkani,
Stéphane Lefebvre,
Narjes Boughrara,
Zoubir Khatir,
Jean-Claude Faugières,
Peter Friedrichs,
Ali Haddouche:
Estimation of SiC JFET temperature during short-circuit operations.
Microelectronics Reliability 49(9-11): 1358-1362 (2009) |
| 2007 |
|---|
| 6 | | Zoubir Khatir,
Stéphane Lefebvre,
F. Saint-Eve:
Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices.
Microelectronics Reliability 47(2-3): 422-428 (2007) |
| 5 | | M. Bouarroudj,
Zoubir Khatir,
J. P. Ousten,
F. Badel,
L. Dupont,
Stéphane Lefebvre:
Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions.
Microelectronics Reliability 47(9-11): 1719-1724 (2007) |
| 4 | | L. Dupont,
Stéphane Lefebvre,
M. Bouaroudj,
Zoubir Khatir,
Jean-Claude Faugières:
Failure modes on low voltage power MOSFETs under high temperature application.
Microelectronics Reliability 47(9-11): 1767-1772 (2007) |
| 2006 |
|---|
| 3 | | L. Dupont,
Zoubir Khatir,
Stéphane Lefebvre,
S. Bontemps:
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling.
Microelectronics Reliability 46(9-11): 1766-1771 (2006) |
| 2004 |
|---|
| 2 | | Zoubir Khatir,
Stéphane Lefebvre:
Boundary element analysis of thermal fatigue effects on high power IGBT modules.
Microelectronics Reliability 44(6): 929-938 (2004) |
| 2003 |
|---|
| 1 | | S. Carubelli,
Zoubir Khatir:
Experimental validation of a thermal modelling method dedicated to multichip power modules in operating conditions.
Microelectronics Journal 34(12): 1143-1151 (2003) |
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