 | 2010 |
| 9 |  | P. Scholz,
C. Gallrapp,
Uwe Kerst,
Ted Lundquist,
Christian Boit:
Optimizing focused ion beam created solid immersion lenses in bulk silicon using design of experiments.
Microelectronics Reliability 50(9-11): 1441-1445 (2010) |
| 2009 |
| 8 |  | Rudolf Schlangen,
Reiner Leihkauf,
Uwe Kerst,
Ted Lundquist,
Peter Egger,
Christian Boit:
Physical analysis, trimming and editing of nanoscale IC function with backside FIB processing.
Microelectronics Reliability 49(9-11): 1158-1164 (2009) |
| 2008 |
| 7 |  | Christian Boit,
Rudolf Schlangen,
Uwe Kerst,
Ted Lundquist:
Physical Techniques for Chip-Backside IC Debug in Nanotechnologies.
IEEE Design & Test of Computers 25(3): 250-257 (2008) |
| 6 |  | Ulrike Kindereit,
Christian Boit,
Uwe Kerst,
Steven Kasapi,
Radu Ispasoiu,
Roy Ng,
William K. Lo:
Comparison of laser voltage probing and mapping results in oversized and minimum size devices of 120 nm and 65 nm technology.
Microelectronics Reliability 48(8-9): 1322-1326 (2008) |
| 2007 |
| 5 |  | Rudolf Schlangen,
Reiner Leihkauf,
Uwe Kerst,
Christian Boit,
Rajesh Jain,
Tahir Malik,
Keneth R. Wilsher,
Ted Lundquist,
Bernd Krüger:
Backside E-Beam Probing on Nano scale devices.
ITC 2007: 1-9 |
| 4 |  | Rudolf Schlangen,
Uwe Kerst,
Christian Boit,
Tahir Malik,
Rajesh Jain,
Ted Lundquist:
Non destructive 3D chip inspection with nano scale potential by use of backside FIB and backscattered electron microscopy.
Microelectronics Reliability 47(9-11): 1523-1528 (2007) |
| 2006 |
| 3 |  | Rudolf Schlangen,
Peter Sadewater,
Uwe Kerst,
Christian Boit:
Contact to contacts or silicide by use of backside FIB circuit edit allowing to approach every active circuit node.
Microelectronics Reliability 46(9-11): 1498-1503 (2006) |
| 2005 |
| 2 |  | Uwe Kerst,
Rudolf Schlangen,
A. Kabakow,
Erwan Le Roy,
Ted Lundquist,
Siegfried Pauthner:
Impact of back side circuit edit on active device performance in bulk silicon ICs.
ITC 2005: 9 |
| 1 |  | Rudolf Schlangen,
Uwe Kerst,
A. Kabakow,
Christian Boit:
Electrical Performance Evaluation of FIB Edited Circuits through Chip Backside Exposing Shallow Trench Isolations.
Microelectronics Reliability 45(9-11): 1544-1549 (2005) |