 | 2011 |
| 5 |  | Hsuan-Ling Kao,
S. P. Shih,
C. S. Yeh,
C. M. Yang,
C. Y. Ke,
Y. C. Lee,
Jeffrey S. Fu,
Li-Chun Chang:
A Ka-band triple push coupled pair VCO using 0.18-μm CMOS technology.
WOCN 2011: 1-4 |
| 4 |  | Hsien-Chin Chiu,
Chia-Shih Cheng,
Hsuan-Ling Kao,
Jeffrey S. Fu,
Qiang Cui,
Juin J. Liou:
A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology.
Microelectronics Reliability 51(12): 2137-2142 (2011) |
| 3 |  | Hsien-Chin Chiu,
Chao-Wei Lin,
Che-Kai Lin,
Hsuan-Ling Kao,
Jeffrey S. Fu:
Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs.
Microelectronics Reliability 51(12): 2163-2167 (2011) |
| 2010 |
| 2 |  | C. M. Yang,
Hsuan-Ling Kao,
Y. C. Chang,
M. T. Chen,
H. M. Chang,
C. H. Wu:
A low phase noise 20 GHz voltage control oscillator using 0.18-μm CMOS technology.
DDECS 2010: 185-188 |
| 2009 |
| 1 |  | Y. C. Chang,
Hsuan-Ling Kao,
C. H. Kao,
C. H. Yang,
Jeffrey S. Fu,
Nemai C. Karmakar,
Li-Chun Chang:
0.18 µm CMOS UWB LNA with new feedback configuration for optimization low noise, high gain and small area.
DDECS 2009: 194-197 |