Rouwaida Kanj

	2012
26		Rouwaida Kanj, Rajiv V. Joshi, Zhuo Li, Jerry Hayes, Sani R. Nassif: Yield estimation via multi-cones. DAC 2012: 1107-1112
25		Rouwaida Kanj, Rajiv V. Joshi: A novel sample reuse methodology for fast statistical simulations with applications to manufacturing variability. ISQED 2012: 672-678
	2011
24		Rajiv V. Joshi, Rouwaida Kanj, Peiyuan Wang, Hai Helen Li: Universal statistical cure for predicting memory loss. ICCAD 2011: 236-239
23		Rouwaida Kanj, Tong Li, Rajiv V. Joshi, Kanak Agarwal, Ali Sadigh, David Winston, Sani R. Nassif: Accelerated statistical simulation via on-demand Hermite spline interpolations. ICCAD 2011: 353-360
22		Rajiv V. Joshi, Rouwaida Kanj, V. Ramadurai: A Novel Column-Decoupled 8T Cell for Low-Power Differential and Domino-Based SRAM Design. IEEE Trans. VLSI Syst. 19(5): 869-882 (2011)
21		Rouwaida Kanj, Rajiv V. Joshi, Sani R. Nassif: The Impact of Statistical Leakage Models on Design Yield Estimation. VLSI Design 2011: (2011)
	2010
20		Rouwaida Kanj, Rajiv V. Joshi, Sani R. Nassif: Statistical leakage modeling for accurate yield analysis: the CDF matching method and its alternatives. ISLPED 2010: 337-342
19		Jeanne Bickford, Nazmul Habib, John Goss, Robert McMahon, Rajiv V. Joshi, Rouwaida Kanj: Use of scalable Parametric Measurement Macro to improve semiconductor technology characterization and product test. ISQED 2010: 315-319
18		Rajiv V. Joshi, Keunwoo Kim, Rouwaida Kanj: FinFET SRAM Design. VLSI Design 2010: 440-445
17		Rajiv V. Joshi, Rouwaida Kanj, Anthony Pelella, Arthur Tuminaro, Yuen H. Chan: The Dawn of Predictive Chip Yield Design: Along and Beyond the Memory Lane. IEEE Design & Test of Computers 27(6): 36-45 (2010)
	2009
16		Rouwaida Kanj, Rajiv V. Joshi, Chad Adams, James Warnock, Sani R. Nassif: An elegant hardware-corroborated statistical repair and test methodology for conquering aging effects. ICCAD 2009: 497-504
15		Aditya Bansal, Rama N. Singh, Rouwaida Kanj, Saibal Mukhopadhyay, Jin-Fuw Lee, Emrah Acar, Amith Singhee, Keunwoo Kim, Ching-Te Chuang, Sani R. Nassif, Fook-Luen Heng, Koushik K. Das: Yield estimation of SRAM circuits using "Virtual SRAM Fab". ICCAD 2009: 631-636
14		Rouwaida Kanj, Rajiv V. Joshi, Jente B. Kuang, J. Kim, Mesut Meterelliyoz, William R. Reohr, Sani R. Nassif, Kevin J. Nowka: Statistical yield analysis of silicon-on-insulator embedded DRAM. ISQED 2009: 190-194
13		Ying Zhou, Rouwaida Kanj, Kanak Agarwal, Zhuo Li, Rajiv V. Joshi, Sani R. Nassif, Weiping Shi: The impact of BEOL lithography effects on the SRAM cell performance and yield. ISQED 2009: 607-612
	2008
12		Rouwaida Kanj, Rajiv V. Joshi, Zhou Li, Jente B. Kuang, Hung C. Ngo, Ying Zhou, Weiping Shi, Sani R. Nassif: SRAM methodology for yield and power efficiency: per-element selectable supplies and memory reconfiguration schemes. ISLPED 2008: 87-92
11		Rouwaida Kanj, Rajiv V. Joshi, Keunwoo Kim, Richard Williams, Sani R. Nassif: Statistical Evaluation of Split Gate Opportunities for Improved 8T/6T Column-Decoupled SRAM Cell Yield. ISQED 2008: 702-707
10		Rouwaida Kanj, Zhuo Li, Rajiv V. Joshi, Frank Liu, Sani R. Nassif: A Root-Finding Method for Assessing SRAM Stability. ISQED 2008: 804-809
	2007
9		Rajiv V. Joshi, Rouwaida Kanj, Keunwoo Kim, Richard Q. Williams, Ching-Te Chuang: A floating-body dynamic supply boosting technique for low-voltage sram in nanoscale PD/SOI CMOS technologies. ISLPED 2007: 8-13
8		Amin Khajeh Djahromi, Ahmed M. Eltawil, Fadi J. Kurdahi, Rouwaida Kanj: Cross Layer Error Exploitation for Aggressive Voltage Scaling. ISQED 2007: 192-197
7		Rouwaida Kanj, Rajiv V. Joshi, Jayakumaran Sivagnaname, Jente B. Kuang, Dhruva Acharyya, Tuyet Nguyen, Chandler McDowell, Sani R. Nassif: Gate Leakage Effects on Yield and Design Considerations of PD/SOI SRAM Designs. ISQED 2007: 33-40
	2006
6		Rouwaida Kanj, Rajiv V. Joshi, Sani R. Nassif: Mixture importance sampling and its application to the analysis of SRAM designs in the presence of rare failure events. DAC 2006: 69-72
5		Fadi J. Kurdahi, Ahmed M. Eltawil, Young-Hwan Park, Rouwaida Kanj, Sani R. Nassif: System-Level SRAM Yield Enhancement. ISQED 2006: 179-184
4		Praveen Elakkumanan, Jente B. Kuang, Kevin J. Nowka, Ramalingam Sridhar, Rouwaida Kanj, Sani R. Nassif: SRAM Local Bit Line Access Failure Analyses. ISQED 2006: 204-209
	2004
3		Rouwaida Kanj, Timothy Lehner, Bhavna Agrawal, Elyse Rosenbaum: Noise characterization of static CMOS gates. DAC 2004: 888-893
2		Rouwaida Kanj, Elyse Rosenbaum: Critical evaluation of SOI design guidelines. IEEE Trans. VLSI Syst. 12(9): 885-894 (2004)
	2002
1		Rouwaida Kanj, Elyse Rosenbaum: A critical look at design guidelines for SOI logic gates. ISCAS (3) 2002: 261-264

Coauthor Index

1	Emrah Acar	[15]
2	Dhruva Acharyya	[7]
3	Chad Adams	[16]
4	Kanak Agarwal	[13] [23]
5	Bhavna Agrawal	[3]
6	Aditya Bansal	[15]
7	Jeanne Bickford	[19]
8	Yuen H. Chan	[17]
9	Ching-Te Chuang	[9] [15]
10	Koushik K. Das	[15]
11	Amin Khajeh Djahromi (Amin Khajeh)	[8]
12	Praveen Elakkumanan	[4]
13	Ahmed M. Eltawil	[5] [8]
14	John Goss	[19]
15	Nazmul Habib	[19]
16	Jerry Hayes	[26]
17	Fook-Luen Heng	[15]
18	Rajiv V. Joshi	[6] [7] [9] [10] [11] [12] [13] [14] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26]
19	J. Kim	[14]
20	Keunwoo Kim	[9] [11] [15] [18]
21	Jente B. Kuang	[4] [7] [12] [14]
22	Fadi J. Kurdahi	[5] [8]
23	Jin-Fuw Lee	[15]
24	Timothy Lehner	[3]
25	Hai Helen Li	[24]
26	Tong Li	[23]
27	Zhou Li	[12]
28	Zhuo Li	[10] [13] [26]
29	Frank Liu	[10]
30	Chandler McDowell	[7]
31	Robert McMahon	[19]
32	Mesut Meterelliyoz	[14]
33	Saibal Mukhopadhyay	[15]
34	Sani R. Nassif	[4] [5] [6] [7] [10] [11] [12] [13] [14] [15] [16] [20] [21] [23] [26]
35	Hung C. Ngo	[12]
36	Tuyet Nguyen	[7]
37	Kevin J. Nowka	[4] [14]
38	Young-Hwan Park	[5]
39	Anthony Pelella	[17]
40	V. Ramadurai	[22]
41	William R. Reohr	[14]
42	Elyse Rosenbaum	[1] [2] [3]
43	Ali Sadigh	[23]
44	Weiping Shi	[12] [13]
45	Rama N. Singh	[15]
46	Amith Singhee	[15]
47	Jayakumaran Sivagnaname	[7]
48	Ramalingam Sridhar	[4]
49	Arthur Tuminaro	[17]
50	Peiyuan Wang	[24]
51	James Warnock	[16]
52	Richard Williams	[11]
53	Richard Q. Williams	[9]
54	David Winston	[23]
55	Ying Zhou	[12] [13]

Last update Sat Jun 2 20:57:36 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page