 | 2011 |
| 7 |  | N. A. Hastas,
N. Arpatzanis,
C. A. Dimitriadis,
Julien Brochet,
Francois Templier,
G. Kamarinos:
Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors.
Microelectronics Reliability 51(3): 556-559 (2011) |
| 2008 |
| 6 |  | N. Arpatzanis,
A. T. Hatzopoulos,
Dimitrios H. Tassis,
C. A. Dimitriadis,
Francois Templier,
M. Oudwan,
G. Kamarinos:
Degradation of n-channel a-Si: H/nc-Si: H bilayer thin-film transistors under DC electrical stress.
Microelectronics Reliability 48(4): 531-536 (2008) |
| 2006 |
| 5 |  | Dimitrios H. Tassis,
A. T. Hatzopoulos,
N. Arpatzanis,
C. A. Dimitriadis,
G. Kamarinos:
Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors.
Microelectronics Reliability 46(12): 2032-2037 (2006) |
| 4 |  | A. T. Hatzopoulos,
Dimitrios H. Tassis,
N. Arpatzanis,
C. A. Dimitriadis,
G. Kamarinos:
Effects of hot carriers in offset gated polysilicon thin-film transistors.
Microelectronics Reliability 46(2-4): 311-316 (2006) |
| 2005 |
| 3 |  | N. A. Hastas,
N. Archontas,
C. A. Dimitriadis,
G. Kamarinos,
T. Nikolaidis,
N. Georgoulas,
A. Thanailakis:
Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors.
Microelectronics Reliability 45(2): 341-348 (2005) |
| 2003 |
| 2 |  | N. A. Hastas,
C. A. Dimitriadis,
J. Brini,
G. Kamarinos,
V. K. Gueorguiev,
S. Kaschieva:
Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors.
Microelectronics Reliability 43(1): 57-60 (2003) |
| 1 |  | N. A. Hastas,
C. A. Dimitriadis,
F. V. Farmakis,
G. Kamarinos:
Effects of hydrogenation on the performance and stability of p-channel polycrystalline silicon thin-film transistors.
Microelectronics Reliability 43(4): 671-674 (2003) |