 | 2011 |
|---|
| 6 |       | Antonio J. García-Loureiro,
Natalia Seoane,
Manuel Aldegunde,
R. Valin,
Asen Asenov,
A. Martinez,
Karol Kalna:
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors.
IEEE Trans. on CAD of Integrated Circuits and Systems 30(6): 841-851 (2011) |
| 2010 |
|---|
| 5 | | Manuel Aldegunde,
Natalia Seoane,
Antonio J. García-Loureiro,
Karol Kalna:
Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes.
Computer Physics Communications 181(1): 24-34 (2010) |
| 4 | | B. Benbakhti,
J. S. Ayubi-Moak,
Karol Kalna,
D. Lin,
G. Hellings,
G. Brammertz,
K. De Meyer,
I. Thayne,
Asen Asenov:
Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures.
Microelectronics Reliability 50(3): 360-364 (2010) |
| 2007 |
|---|
| 3 | | Manuel Aldegunde,
Antonio J. García-Loureiro,
Karol Kalna:
Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs.
LSSC 2007: 115-122 |
| 2005 |
|---|
| 2 |  | Natalia Seoane,
Antonio J. García-Loureiro,
Karol Kalna,
Asen Asenov:
A High-Performance Parallel Device Simulator for High Electron Mobility Transistors.
PARCO 2005: 407-414 |
| 2003 |
|---|
| 1 | | Karol Kalna,
Asen Asenov:
Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study.
Mathematics and Computers in Simulation 62(3-6): 357-366 (2003) |
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