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| 2012 | ||
|---|---|---|
| 14 | C. Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, A. Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai: Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer. Microelectronics Reliability 52(4): 688-691 (2012) | |
| 2011 | ||
| 13 | D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, A. Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai: Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise. Microelectronics Reliability 51(4): 746-750 (2011) | |
| 12 | Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kenji Ohmori, Kenji Natori, Keisaku Yamada, Hiroshi Iwai: Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors. Microelectronics Reliability 51(5): 879-884 (2011) | |
| 11 | Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst: Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs. Microelectronics Reliability 51(5): 885-888 (2011) | |
| 10 | Hiroshi Iwai, Kenji Natori, Kenji Shiraishi, Jun-ichi Iwata, Atsushi Oshiyama, Keisaku Yamada, Kenji Ohmori, Kuniyuki Kakushima, Parhat Ahmet: Si nanowire FET and its modeling. SCIENCE CHINA Information Sciences 54(5): 1004-1011 (2011) | |
| 2010 | ||
| 9 | Hiroshi Shimomura, Kuniyuki Kakushima, Hiroshi Iwai: Equivalent Noise Temperature Representation for Scaled MOSFETs. IEICE Transactions 93-C(10): 1550-1552 (2010) | |
| 8 | Hiroshi Shimomura, Kuniyuki Kakushima, Hiroshi Iwai: Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs. IEICE Transactions 93-C(5): 678-684 (2010) | |
| 7 | Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao, Kazuo Tsutsui, Hiroshi Iwai: Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. Microelectronics Reliability 50(3): 332-337 (2010) | |
| 6 | Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, T. Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai: SrO capping effect for La2O3/Ce-silicate gate dielectrics. Microelectronics Reliability 50(3): 356-359 (2010) | |
| 5 | Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai: Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. Microelectronics Reliability 50(6): 790-793 (2010) | |
| 2009 | ||
| 4 | Sik-Lam Siu, Hei Wong, Wing-Shan Tam, Kuniyuki Kakushima, Hiroshi Iwai: Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors. Microelectronics Reliability 49(4): 387-391 (2009) | |
| 2008 | ||
| 3 | Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai: Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack. Microelectronics Reliability 48(11-12): 1769-1771 (2008) | |
| 2007 | ||
| 2 | Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, Hiroshi Iwai: Parasitic Effects in Multi-Gate MOSFETs. IEICE Transactions 90-C(10): 2051-2056 (2007) | |
| 2005 | ||
| 1 | Kuniyuki Kakushima, T. Bourouina, T. Sarnet, G. Kerrien, D. Débarre, J. Boulmer, Hiroyuki Fujita: Silicon periodic nano-structures obtained by laser exposure of nano-wires. Microelectronics Journal 36(7): 629-633 (2005) | |
Colors in the list of coauthors
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