 | 2011 |
| 13 |  | Felice Crupi,
Massimo Alioto,
Jacopo Franco,
Paolo Magnone,
Ben Kaczer,
Guido Groeseneken,
Jerome Mitard,
Liesbeth Witters,
Thomas Y. Hoffmann:
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling.
ISCAS 2011: 2249-2252 |
| 12 |  | Paolo Magnone,
Felice Crupi,
Massimo Alioto,
Ben Kaczer,
Brice De Jaeger:
Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements.
IEEE Trans. VLSI Syst. 19(9): 1569-1582 (2011) |
| 2010 |
| 11 |  | Paolo Magnone,
Felice Crupi,
Massimo Alioto,
Ben Kaczer:
Experimental study of leakage-delay trade-off in Germanium pMOSFETs for logic circuits.
ISCAS 2010: 1699-1702 |
| 2009 |
| 10 |  | R. Fernández-García,
Ben Kaczer,
Guido Groeseneken:
A CMOS circuit for evaluating the NBTI over a wide frequency range.
Microelectronics Reliability 49(8): 885-891 (2009) |
| 2008 |
| 9 |  | Georges G. E. Gielen,
Peter H. N. De Wit,
Elie Maricau,
J. Loeckx,
J. Martín-Martínez,
Ben Kaczer,
Guido Groeseneken,
R. Rodríguez,
M. Nafría:
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies.
DATE 2008: 1322-1327 |
| 2007 |
| 8 |  | A. Shickova,
Ben Kaczer,
A. Veloso,
M. Aoulaiche,
M. Houssa,
H. E. Maes,
Guido Groeseneken,
J. A. Kittl:
NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase.
Microelectronics Reliability 47(4-5): 505-507 (2007) |
| 7 |  | Ben Kaczer,
Robin Degraeve,
Philippe Roussel,
Guido Groeseneken:
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability.
Microelectronics Reliability 47(4-5): 559-566 (2007) |
| 2006 |
| 6 |  | Antonis Papanikolaou,
Miguel Miranda,
Hua Wang,
Francky Catthoor,
M. Satyakiran,
Pol Marchal,
Ben Kaczer,
C. Bruynseraede,
Zsolt Tokei:
Reliability issues in deep deep sub-micron technologies: time-dependent variability and its impact on embedded system design.
VLSI-SoC 2006: 342-347 |
| 5 |  | R. Fernández,
R. Rodríguez,
M. Nafría,
X. Aymerich,
Ben Kaczer,
Guido Groeseneken:
FinFET and MOSFET preliminary comparison of gate oxide reliability.
Microelectronics Reliability 46(9-11): 1608-1611 (2006) |
| 2005 |
| 4 |  | Robert O'Connor,
Greg Hughes,
Robin Degraeve,
Ben Kaczer:
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance.
Microelectronics Reliability 45(5-6): 869-874 (2005) |
| 2003 |
| 3 |  | Stefano Aresu,
Ward De Ceuninck,
G. Knuyt,
J. Mertens,
J. Manca,
Luc De Schepper,
Robin Degraeve,
Ben Kaczer,
Marc D'Olieslaeger,
Jan D'Haen:
A new method for the analysis of high-resolution SILC data.
Microelectronics Reliability 43(9-11): 1483-1488 (2003) |
| 2002 |
| 2 |  | Ben Kaczer,
Robin Degraeve,
M. Rasras,
A. De Keersgieter,
K. Van de Mieroop,
Guido Groeseneken:
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study.
Microelectronics Reliability 42(4-5): 555-564 (2002) |
| 1 |  | Stefano Aresu,
Ward De Ceuninck,
R. Dreesen,
K. Croes,
E. Andries,
J. Manca,
Luc De Schepper,
Robin Degraeve,
Ben Kaczer,
Marc D'Olieslaeger:
High-resolution SILC measurements of thin SiO2 at ultra low voltages.
Microelectronics Reliability 42(9-11): 1485-1489 (2002) |