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B. El Jani Coauthor index pubzone.org

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DBLP keys2008
11Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLH. Touati, M. Souissi, Z. Chine, B. El Jani: Near-infrared photoluminescence of V-doped GaN. Microelectronics Journal 39(12): 1457-1460 (2008)
10Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLM. Souissi, H. Touati, A. Fouzri, A. Bchetnia, B. El Jani: Effect of carrier gas on the surface morphology of V-doped GaN layers. Microelectronics Journal 39(12): 1521-1524 (2008)
9Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLM. M. Habchi, A. Rebey, B. El Jani: AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response. Microelectronics Journal 39(12): 1587-1593 (2008)
2006
8Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLM. Souissi, Z. Chine, A. Bchetnia, H. Touati, B. El Jani: Photoluminescence of V-doped GaN thin films grown by MOVPE technique. Microelectronics Journal 37(1): 1-4 (2006)
7Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLA. Rebey, W. Fathallah, B. El Jani: In depth study of the compensation in annealed heavily carbon doped GaAs. Microelectronics Journal 37(2): 158-166 (2006)
6Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLC. Touzi, F. Omnès, T. Boufaden, P. Gibart, B. El Jani: Realisation of 'Solar Blind' AlGaN Photodetectors: Measured and calculated spectral response. Microelectronics Journal 37(4): 336-339 (2006)
2004
5Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLA. Rebey, Z. Chine, W. Fathallah, B. El Jani, E. Goovaerts, S. Laugt: Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs. Microelectronics Journal 35(11): 875-880 (2004)
4Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLN. Chaaben, T. Boufaden, M. Christophersen, B. El Jani: Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE. Microelectronics Journal 35(11): 891-895 (2004)
3Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLA. Rebey, M. M. Habchi, Z. Benzarti, B. El Jani: Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry. Microelectronics Journal 35(2): 179-184 (2004)
2003
2Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLA. Bchetnia, A. Rebey, B. El Jani, J. Cernogora, J.-L. Fave: New photoluminescence lines in Vanadium doped GaAs grown by MOVPE. Microelectronics Journal 34(4): 271-274 (2003)
1Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLT. Boufaden, N. Chaaben, M. Christophersen, B. El Jani: GaN growth on porous silicon by MOVPE. Microelectronics Journal 34(9): 843-848 (2003)

Coauthor Index

1A. Bchetnia [2] [8] [10]
2Z. Benzarti [3]
3T. Boufaden [1] [4] [6]
4J. Cernogora [2]
5N. Chaaben [1] [4]
6Z. Chine [5] [8] [11]
7M. Christophersen [1] [4]
8W. Fathallah [5] [7]
9J.-L. Fave [2]
10A. Fouzri [10]
11P. Gibart [6]
12E. Goovaerts [5]
13M. M. Habchi [3] [9]
14S. Laugt [5]
15F. Omnès [6]
16A. Rebey [2] [3] [5] [7] [9]
17M. Souissi [8] [10] [11]
18H. Touati [8] [10] [11]
19C. Touzi [6]

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