J.-C. De Jaeger

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2007

1 Brahim Benbakhti, Michel Rousseau, J.-C. De Jaeger: Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. Microelectronics Journal 38(1): 7-13 (2007)

	2007
1		Brahim Benbakhti, Michel Rousseau, J.-C. De Jaeger: Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. Microelectronics Journal 38(1): 7-13 (2007)

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