Naotaka Iwata

	2008
2		Fumio Harima, Yasunori Bito, Hidemasa Takahashi, Naotaka Iwata: 1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET. IEICE Transactions 91-C(7): 1104-1108 (2008)
	2007
1		Kouji Ishikura, Isao Takenaka, Hidemasa Takahashi, Kouichi Hasegawa, Kazunori Asano, Naotaka Iwata: High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station. IEICE Transactions 90-C(5): 923-928 (2007)

Coauthor Index

1	Kazunori Asano	[1]
2	Yasunori Bito	[2]
3	Fumio Harima	[2]
4	Kouichi Hasegawa	[1]
5	Kouji Ishikura	[1]
6	Hidemasa Takahashi	[1] [2]
7	Isao Takenaka	[1]

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