 | 2010 |
|---|
| 9 |       | Rosario Rao,
Fernanda Irrera:
Threshold voltage instability in high-k based flash memories.
Microelectronics Reliability 50(9-11): 1273-1277 (2010) |
| 2009 |
|---|
| 8 | | Fernanda Irrera,
Ivan Piccoli,
Giuseppina Puzzilli,
Massimo Rossini,
Tommaso Vali:
Reliability improvements in 50 nm MLC NAND flash memory using short voltage programming pulses.
Microelectronics Reliability 49(2): 135-138 (2009) |
| 2007 |
|---|
| 7 | | Giuseppina Puzzilli,
Bogdan Govoreanu,
Fernanda Irrera,
Maarten Rosmeulen,
Jan Van Houdt:
Characterization of charge trapping in SiO2/Al2O3 dielectric stacks by pulsed C-V technique.
Microelectronics Reliability 47(4-5): 508-512 (2007) |
| 2005 |
|---|
| 6 | | Fernanda Irrera,
Giuseppina Puzzilli,
Domenico Caputo:
A comprehensive model for oxide degradation.
Microelectronics Reliability 45(5-6): 853-856 (2005) |
| 5 | | Fernanda Irrera,
Giuseppina Puzzilli:
Crested barrier in the tunnel stack of non-volatile memories.
Microelectronics Reliability 45(5-6): 907-910 (2005) |
| 2004 |
|---|
| 4 | | Domenico Caputo,
Fernanda Irrera:
On the reliability of ZrO2 films for VLSI applications.
Microelectronics Reliability 44(5): 739-745 (2004) |
| 2002 |
|---|
| 3 | | Domenico Caputo,
Fernanda Irrera:
Investigation and modeling of stressed thermal oxides.
Microelectronics Reliability 42(3): 327-333 (2002) |
| 2 | | Ruggero Feruglio,
Fernanda Irrera,
Bruno Riccò:
Microscopic aspects of defect generation in SiO2.
Microelectronics Reliability 42(9-11): 1427-1432 (2002) |
| 2001 |
|---|
| 1 | | Fernanda Irrera:
Electrical degradation and recovery of dielectrics in n++-poly-Si/SiOx/SiO2/p-sub structures designed for application in low-voltage non-volatile memories.
Microelectronics Reliability 41(11): 1809-1813 (2001) |
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