G. Innertsberger

	2001
1		G. Innertsberger, T. Pompl, M. Kerber: The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices. Microelectronics Reliability 41(7): 973-975 (2001)

Coauthor Index

1	M. Kerber	[1]
2	T. Pompl	[1]

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