Francesco Iannuzzo

	2011
21		Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo: Operation of SiC normally-off JFET at the edges of its safe operating area. Microelectronics Reliability 51(9-11): 1767-1772 (2011)
	2010
20		Giovanni Busatto, Francesco Iannuzzo: Editorial. Microelectronics Reliability 50(9-11): 1191-1192 (2010)
19		Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo: IGBT RBSOA non-destructive testing methods: Analysis and discussion. Microelectronics Reliability 50(9-11): 1731-1737 (2010)
18		G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, Francesco Velardi: Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectronics Reliability 50(9-11): 1842-1847 (2010)
	2009
17		G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectronics Reliability 49(9-11): 1033-1037 (2009)
16		Giovanni Busatto, Carmine Abbate, Francesco Iannuzzo, P. Cristofaro: Instable mechanisms during unclamped operation of high power IGBT modules. Microelectronics Reliability 49(9-11): 1363-1369 (2009)
	2008
15		G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectronics Reliability 48(8-9): 1306-1309 (2008)
14		G. Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo: IGBT modules robustness during turn-off commutation. Microelectronics Reliability 48(8-9): 1435-1439 (2008)
13		Francesco Iannuzzo: High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs. Microelectronics Reliability 48(8-9): 1449-1452 (2008)
	2007
12		Carmine Abbate, G. Busatto, L. Fratelli, Francesco Iannuzzo, B. Cascone, R. Manzo: The robustness of series-connected high power IGBT modules. Microelectronics Reliability 47(9-11): 1746-1750 (2007)
	2006
11		Francesco Iannuzzo, G. Busatto, Carmine Abbate: Investigation of MOSFET failure in soft-switching conditions. Microelectronics Reliability 46(9-11): 1790-1794 (2006)
10		Carmine Abbate, G. Busatto, L. Fratelli, Francesco Iannuzzo: The high frequency behaviour of high voltage and current IGBT modules. Microelectronics Reliability 46(9-11): 1848-1853 (2006)
9		G. Busatto, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò: Experimental study of power MOSFET's gate damage in radiation environment. Microelectronics Reliability 46(9-11): 1854-1857 (2006)
	2005
8		G. Busatto, A. Porzio, F. Velardi, Francesco Iannuzzo, A. Sanseverino, G. Currò: Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectronics Reliability 45(9-11): 1711-1716 (2005)
7		Francesco Iannuzzo: Non-destructive Testing Technique for MOSFET's Characterisation during Soft-Switching ZVS Operations. Microelectronics Reliability 45(9-11): 1738-1741 (2005)
	2003
6		F. Velardi, Francesco Iannuzzo, G. Busatto, J. Wyss, A. Candelori: Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, . Microelectronics Reliability 43(4): 549-555 (2003)
5		Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella: MAGFET based current sensing for power integrated circuit. Microelectronics Reliability 43(4): 577-583 (2003)
4		F. Velardi, Francesco Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina: Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectronics Reliability 43(9-11): 1847-1851 (2003)
3		G. Busatto, Francesco Iannuzzo, F. Velardi, M. Valentino, G. P. Pepe: Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. Microelectronics Reliability 43(9-11): 1907-1912 (2003)
	2002
2		F. Velardi, Francesco Iannuzzo, G. Busatto, J. Wyss, A. Kaminksy: The Reliability of New Generation Power MOSFETs in Radiation Environment. Microelectronics Reliability 42(9-11): 1629-1634 (2002)
1		G. Busatto, B. Cascone, L. Fratelli, M. Balsamo, Francesco Iannuzzo, F. Velardi: Non-destructive high temperature characterisation of high-voltage IGBTs. Microelectronics Reliability 42(9-11): 1635-1640 (2002)

Coauthor Index

1	B. Abbate	[14]
2	Carmine Abbate	[10] [11] [12] [14] [16] [19] [21]
3	M. Balsamo	[1]
4	Giovanni Busatto (G. Busatto)	[1] [2] [3] [4] [5] [6] [8] [9] [10] [11] [12] [14] [15] [16] [17] [18] [19] [20] [21]
5	A. Candelori	[4] [6]
6	Roberto La Capruccia	[5]
7	A. Cascio	[4]
8	B. Cascone	[1] [12]
9	P. Cristofaro	[16]
10	G. Currò	[4] [8] [9] [15] [17] [18]
11	L. Fratelli	[1] [10] [12]
12	F. Frisina	[4]
13	A. Kaminksy	[2]
14	R. Manzo	[12]
15	G. P. Pepe	[3]
16	A. Porzio	[8] [9] [15] [17] [18]
17	Roberto Roncella	[5]
18	A. Sanseverino	[4] [8] [9] [15] [17] [18]
19	M. Valentino	[3]
20	Francesco Velardi (F. Velardi)	[1] [2] [3] [4] [5] [6] [8] [9] [15] [17] [18]
21	J. Wyss	[2] [4] [6]

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