 | 2011 |
|---|
| 7 |       | V. S. Balderrama,
Magali Estrada,
Antonio Cerdeira,
B. S. Soto-Cruz,
L. F. Marsal,
J. Pallares,
J. C. Nolasco,
Benjamín Iñíguez,
E. Palomares,
J. Albero:
Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation.
Microelectronics Reliability 51(3): 597-601 (2011) |
| 2008 |
|---|
| 6 | | J. C. Tinoco,
Magali Estrada,
Benjamín Iñíguez,
Antonio Cerdeira:
Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures.
Microelectronics Reliability 48(3): 370-381 (2008) |
| 2006 |
|---|
| 5 | | S. Kolberg,
Tor A. Fjeldly,
Benjamín Iñíguez:
Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs.
International Conference on Computational Science (4) 2006: 607-614 |
| 2005 |
|---|
| 4 | | Magali Estrada,
Antonio Cerdeira,
L. Resendiz,
Benjamín Iñíguez,
L. F. Marzal,
J. Pallares:
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs.
Microelectronics Reliability 45(7-8): 1161-1166 (2005) |
| 1998 |
|---|
| 3 | | Eugeni García-Moreno,
Benjamín Iñíguez,
Miquel Roca,
Jaume Segura,
Eugeni Isern:
Clocked Dosimeter Compatible with Digital CMOS Technology.
J. Electronic Testing 12(1-2): 101-110 (1998) |
| 1995 |
|---|
| 2 | | Benjamín Iñíguez,
Eugeni García-Moreno:
Development of a Cinfinity-continuous small-signal model for a MOS transistor in normal operation.
IEEE Trans. on CAD of Integrated Circuits and Systems 14(2): 163-166 (1995) |
| 1994 |
|---|
| 1 |  | Benjamín Iñíguez,
Eugeni García-Moreno:
Development of a Cinfinty-Continuous Small-Signal Model for a MOS Transistor.
ISCAS 1994: 193-196 |
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