 | 2010 |
|---|
| 6 |       | Chih-Hong Hwang,
Yiming Li,
Ming-Hung Han:
Statistical variability in FinFET devices with intrinsic parameter fluctuations.
Microelectronics Reliability 50(5): 635-638 (2010) |
| 5 | | Kuo-Fu Lee,
Yiming Li,
Tien-Yeh Li,
Zhong-Cheng Su,
Chin-Hong Hwang:
Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell.
Microelectronics Reliability 50(5): 647-651 (2010) |
| 4 | | Ming-Hung Han,
Yiming Li,
Chih-Hong Hwang:
The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit.
Microelectronics Reliability 50(5): 657-661 (2010) |
| 2009 |
|---|
| 3 | | Yiming Li,
Chih-Hong Hwang,
Tien-Yeh Li:
Discrete-Dopant-Induced Timing Fluctuation and Suppression in Nanoscale CMOS Circuit.
IEEE Trans. on Circuits and Systems 56-II(5): 379-383 (2009) |
| 2008 |
|---|
| 2 | | Yiming Li,
Chih-Hong Hwang,
Ta-Ching Yeh,
Tien-Yeh Li:
Large-scale atomistic approach to random-dopant-induced characteristic variability in nanoscale CMOS digital and high-frequency integrated circuits.
ICCAD 2008: 278-285 |
| 2007 |
|---|
| 1 | | Yiming Li,
Chih-Hong Hwang,
Shao-Ming Yu:
Numerical Simulation of Static Noise Margin for a Six-Transistor Static Random Access Memory Cell with 32nm Fin-Typed Field Effect Transistors.
International Conference on Computational Science (4) 2007: 227-234 |
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