P. K. Hurley

	2010
9		E. Miranda, E. O'Connor, P. K. Hurley: Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics. Microelectronics Reliability 50(9-11): 1294-1297 (2010)
	2009
8		E. Miranda, J. Martin-Martinez, E. O'Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O'Connell, P. K. Hurley: Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. Microelectronics Reliability 49(9-11): 1052-1055 (2009)
	2007
7		Octavian Buiu, Steve Hall, O. Engstrom, B. Raeissi, M. Lemme, P. K. Hurley, K. Cherkaoui: Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation. Microelectronics Reliability 47(4-5): 678-681 (2007)
6		R. A. Farrell, K. Cherkaoui, N. Petkov, H. Amenitsch, J. D. Holmes, P. K. Hurley, M. A. Morris: Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. Microelectronics Reliability 47(4-5): 759-763 (2007)
5		P. K. Hurley, K. Cherkaoui, S. McDonnell, G. Hughes, A. W. Groenland: Characterisation and passivation of interface defects in (1 0 0)-Si/SiO2/HfO2/TiN gate stacks. Microelectronics Reliability 47(8): 1195-1201 (2007)
	2005
4		J. M. Decams, H. Guillon, C. Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, B. J. O'Sullivan, M. Modreanu, P. K. Hurley: Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. Microelectronics Reliability 45(5-6): 929-932 (2005)
3		Q. Fang, I. Liaw, M. Modreanu, P. K. Hurley, I. W. Boyd: Post deposition UV-induced O2 annealing of HfO2 thin films. Microelectronics Reliability 45(5-6): 957-960 (2005)
2		Y. Lu, Octavian Buiu, Steve Hall, P. K. Hurley: Optical and electrical characterization of hafnium oxide deposited by MOCVD. Microelectronics Reliability 45(5-6): 965-968 (2005)
	2001
1		B. J. O'Sullivan, P. K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven: Flat band voltage shift and oxide properties after rapid thermal annealing. Microelectronics Reliability 41(7): 1053-1056 (2001)

Coauthor Index

1	H. Amenitsch	[6]
2	M. Audier	[4]
3	I. W. Boyd	[3]
4	Octavian Buiu	[2] [7]
5	O. Cadix	[4]
6	P. Casey	[8]
7	K. Cherkaoui	[5] [6] [7] [8]
8	F. N. Cubaynes	[1]
9	J. M. Decams	[4]
10	C. Dubourdieu	[4]
11	O. Engstrom	[7]
12	Q. Fang	[3]
13	R. A. Farrell	[6]
14	A. W. Groenland	[5]
15	H. Guillon	[4]
16	Steve Hall	[2] [7]
17	J. D. Holmes	[6]
18	G. Hughes	[5] [8]
19	C. Jiménez	[4]
20	M. Lemme	[7]
21	I. Liaw	[3]
22	R. Long	[8]
23	Y. Lu	[2]
24	J. Martin-Martinez	[8]
25	S. McDonnell	[5]
26	E. Miranda	[8] [9]
27	M. Modreanu	[3] [4]
28	S. Monaghan	[8]
29	M. A. Morris	[6]
30	D. O'Connell	[8]
31	E. O'Connor	[8] [9]
32	B. J. O'Sullivan	[1] [4]
33	N. Petkov	[6]
34	B. Raeissi	[7]
35	J. P. Sénateur	[4]
36	P. A. Stolk	[1]
37	F. P. Widdershoven	[1]

Colors in the list of coauthors

Last update Thu May 31 18:55:10 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page