 | 2011 |
|---|
| 10 |       | N. Ruiz Amador,
V. Huard,
E. Pion,
F. Cacho,
Damien Croain,
V. Robert,
Sylvain Engels,
Philippe Flatresse,
L. Anghel:
Bottom-up digital system-level reliability modeling.
CICC 2011: 1-4 |
| 9 | | V. Huard,
N. Ruiz Amador,
F. Cacho,
E. Pion:
A bottom-up approach for System-On-Chip reliability.
Microelectronics Reliability 51(9-11): 1425-1439 (2011) |
| 2007 |
|---|
| 8 | | C. R. Parthasarathy,
A. Bravaix,
C. Guérin,
M. Denais,
V. Huard:
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation.
PATMOS 2007: 191-200 |
| 2006 |
|---|
| 7 | | V. Huard,
M. Denais,
C. R. Parthasarathy:
NBTI degradation: From physical mechanisms to modelling.
Microelectronics Reliability 46(1): 1-23 (2006) |
| 6 | | C. R. Parthasarathy,
M. Denais,
V. Huard,
G. Ribes,
D. Roy,
C. Guérin,
F. Perrier,
E. Vincent,
A. Bravaix:
Designing in reliability in advanced CMOS technologies.
Microelectronics Reliability 46(9-11): 1464-1471 (2006) |
| 2005 |
|---|
| 5 | | V. Huard,
M. Denais,
F. Perrier,
N. Revil,
C. R. Parthasarathy,
A. Bravaix,
E. Vincent:
A thorough investigation of MOSFETs NBTI degradation.
Microelectronics Reliability 45(1): 83-98 (2005) |
| 4 | | G. Ribes,
S. Bruyère,
M. Denais,
F. Monsieur,
V. Huard,
D. Roy,
G. Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.
Microelectronics Reliability 45(12): 1842-1854 (2005) |
| 3 | | A. Bravaix,
D. Goguenheim,
M. Denais,
V. Huard,
C. R. Parthasarathy,
F. Perrier,
N. Revil,
E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
Microelectronics Reliability 45(9-11): 1370-1375 (2005) |
| 2003 |
|---|
| 2 | | F. Monsieur,
E. Vincent,
V. Huard,
S. Bruyère,
D. Roy,
Thomas Skotnicki,
G. Pananakakis,
G. Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.
Microelectronics Reliability 43(8): 1199-1202 (2003) |
| 1 | | G. Ribes,
S. Bruyère,
F. Monsieur,
D. Roy,
V. Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown.
Microelectronics Reliability 43(8): 1211-1214 (2003) |
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