 | 2008 |
| 4 |  | Lunchun Guo,
Xiaoliang Wang,
Cuimei Wang,
Hongling Xiao,
Junxue Ran,
Weijun Luo,
Xiaoyan Wang,
Baozhu Wang,
Cebao Fang,
Guoxin Hu:
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure.
Microelectronics Journal 39(5): 777-781 (2008) |
| 2007 |
| 3 |  | Xiaoyan Wang,
Xiaoliang Wang,
Guoxin Hu,
Baozhu Wang,
Zhiyong Ma,
Hongling Xiao,
Cuimei Wang,
Junxue Ran,
Jianping Li:
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition.
Microelectronics Journal 38(8-9): 838-841 (2007) |
| 2006 |
| 2 |  | Junxue Ran,
Xiaoliang Wang,
Guoxin Hu,
Junxi Wang,
Jianping Li,
Cuimei Wang,
Yiping Zeng,
Jinmin Li:
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD.
Microelectronics Journal 37(7): 583-585 (2006) |
| 2005 |
| 1 |  | Xiaoliang Wang,
Cuimei Wang,
Guoxin Hu,
Junxi Wang,
Junxue Ran,
Cebao Fang,
Jianping Li,
Yiping Zeng,
Jinmin Li,
Xinyu Liu,
He Qian:
Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates.
Science in China Series F: Information Sciences 48(6): 808-814 (2005) |