 | 2007 |
| 4 |  | A. Shickova,
Ben Kaczer,
A. Veloso,
M. Aoulaiche,
M. Houssa,
H. E. Maes,
Guido Groeseneken,
J. A. Kittl:
NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase.
Microelectronics Reliability 47(4-5): 505-507 (2007) |
| 3 |  | M. Houssa,
M. Aoulaiche,
Stefan De Gendt,
Guido Groeseneken,
Marc M. Heyns:
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling.
Microelectronics Reliability 47(6): 880-889 (2007) |
| 2005 |
| 2 |  | M. Houssa:
Modelling negative bias temperature instabilities in advanced p-MOSFETs.
Microelectronics Reliability 45(1): 3-12 (2005) |
| 2001 |
| 1 |  | C. Zhao,
G. Roebben,
H. Bender,
E. Young,
S. Haukka,
M. Houssa,
M. Naili,
Stefan De Gendt,
Marc M. Heyns,
Omer Van der Biest:
In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction.
Microelectronics Reliability 41(7): 995-998 (2001) |