 | 2009 |
| 5 |  | V. Haxha,
R. Garg,
M. A. Migliorato,
I. W. Drouzas,
J. M. Ulloa,
P. M. Koenraad,
M. J. Steer,
H. Y. Liu,
M. Hopkinson,
D. J. Mowbray:
Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers.
Microelectronics Journal 40(3): 533-536 (2009) |
| 4 |  | P. D. L. Judson,
K. M. Groom,
D. T. D. Childs,
M. Hopkinson,
N. Krstajic,
R. A. Hogg:
Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode.
Microelectronics Journal 40(3): 588-591 (2009) |
| 3 |  | F. A. M. Marques,
A. F. G. Monte,
M. Hopkinson:
Electric field effects on the carrier migration in self-assembled InAs/GaAs quantum dots.
Microelectronics Journal 40(4-5): 838-840 (2009) |
| 2006 |
| 2 |  | J. S. Ng,
H. Y. Liu,
M. J. Steer,
M. Hopkinson,
J. P. R. David:
Photoluminescence beyond 1.5mum from InAs quantum dots.
Microelectronics Journal 37(12): 1468-1470 (2006) |
| 1 |  | J. C. Lin,
P. W. Fry,
R. A. Hogg,
M. Hopkinson,
I. M. Ross,
A. G. Cullis,
R. S. Kolodka,
A. I. Tartakovskii,
M. S. Skolnick:
The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface.
Microelectronics Journal 37(12): 1505-1510 (2006) |