 | 2011 |
|---|
| 5 |       | Toshiro Hiramoto,
Anil Kumar,
Tomoko Mizutani,
Jun Nishimura,
Takuya Saraya:
Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs.
CICC 2011: 1-4 |
| 4 | | Toshiro Hiramoto:
Ultra-low-voltage operation: device perspective.
ISLPED 2011: 59-60 |
| 2007 |
|---|
| 3 | | Toshiro Hiramoto,
Toshiharu Nagumo,
Tetsu Ohtou,
Kouki Yokoyama:
Device Design of Nanoscale MOSFETs Considering the Suppression of Short Channel Effects and Characteristics Variations.
IEICE Transactions 90-C(4): 836-841 (2007) |
| 2006 |
|---|
| 2 | | Toshiro Hiramoto,
Masumi Saitoh,
Gen Tsutsui:
Emerging nanoscale silicon devices taking advantage of nanostructure physics.
IBM Journal of Research and Development 50(4-5): 411-418 (2006) |
| 2001 |
|---|
| 1 | | Takashi Inukai,
Toshiro Hiramoto,
Takayasu Sakurai:
Variable threshold CMOS (VTCMOS) in series connected circuits.
ISLPED 2001: 201-206 |
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