 | 2012 |
|---|
| 7 |       | Akio Ohta,
Yuta Goto,
Shingo Nishigaki,
Guobin Wei,
Hideki Murakami,
Seiichiro Higashi,
Seiichi Miyazaki:
Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering.
IEICE Transactions 95-C(5): 879-884 (2012) |
| 2011 |
|---|
| 6 | | Guobin Wei,
Yuta Goto,
Akio Ohta,
Katsunori Makihara,
Hideki Murakami,
Seiichiro Higashi,
Seiichi Miyazaki:
Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure.
IEICE Transactions 94-C(5): 699-704 (2011) |
| 5 | | Akio Ohta,
Daisuke Kanme,
Hideki Murakami,
Seiichiro Higashi,
Seiichi Miyazaki:
Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities.
IEICE Transactions 94-C(5): 717-723 (2011) |
| 2008 |
|---|
| 4 | | Katsunori Makihara,
Mitsuhisa Ikeda,
Seiichiro Higashi,
Seiichi Miyazaki:
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM.
IEICE Transactions 91-C(5): 712-715 (2008) |
| 2007 |
|---|
| 3 | | Yanli Pei,
Hideki Murakami,
Seiichiro Higashi,
Seiichi Miyazaki,
Seiji Inumiya,
Yasuo Nara:
Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors.
IEICE Transactions 90-C(5): 962-967 (2007) |
| 2005 |
|---|
| 2 | | Hideki Murakami,
Yoshikazu Moriwaki,
Masafumi Fujitake,
Daisuke Azuma,
Seiichiro Higashi,
Seiichi Miyazaki:
Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate.
IEICE Transactions 88-C(4): 646-650 (2005) |
| 1 | | Katsunori Makihara,
Yoshihiro Okamoto,
Hideki Murakami,
Seiichiro Higashi,
Seiichi Miyazaki:
Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique.
IEICE Transactions 88-C(4): 705-708 (2005) |
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