Clemens Heitzinger

	2011
12		Alena Bulyha, Clemens Heitzinger, Norbert J. Mauser: Bio-Sensors: Modelling and Simulation of Biologically Sensitive Field-Effect-Transistors. ERCIM News 2011(85): 40-41 (2011)
	2010
11		Clemens Heitzinger, Norbert J. Mauser, Christian A. Ringhofer: Multiscale Modeling of Planar and Nanowire Field-Effect Biosensors. SIAM Journal of Applied Mathematics 70(5): 1634-1654 (2010)
	2009
10		Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr, Clemens Heitzinger, Norbert J. Mauser, Christian A. Ringhofer: Study of the Properties of Biotin-streptavidin Sensitive BioFETs. BIODEVICES 2009: 24-30
	2006
9		W. Wessner, Johann Cervenka, Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr: Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes. IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2129-2139 (2006)
	2005
8		Clemens Heitzinger, Alireza Sheikholeslami, Jong Mun Park, Siegfried Selberherr: A method for generating structurally aligned grids for semiconductor device simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 24(10): 1485-1491 (2005)
	2004
7		Thomas Binder, Clemens Heitzinger, Siegfried Selberherr: A study on global and local optimization techniques for TCAD analysis tasks. IEEE Trans. on CAD of Integrated Circuits and Systems 23(6): 814-822 (2004)
6		Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr: An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results. Mathematics and Computers in Simulation 66(2-3): 219-230 (2004)
5		Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr: Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures. Microelectronics Journal 35(10): 805-810 (2004)
4		Clemens Heitzinger, Siegfried Selberherr: On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem. Microelectronics Journal 35(2): 167-171 (2004)
	2003
3		Clemens Heitzinger, Wolfgang Pyka, Naoki Tamaoki, Toshiro Takase, Toshimitsu Ohmine, Siegfried Selberherr: Simulation of arsenic in situ doping with polysilicon CVD and its application to high aspect ratio trenches. IEEE Trans. on CAD of Integrated Circuits and Systems 22(3): 285-292 (2003)
2		Clemens Heitzinger, Andreas Hössinger, Siegfried Selberherr: On smoothing three-dimensional Monte Carlo ion implantation simulation results. IEEE Trans. on CAD of Integrated Circuits and Systems 22(7): 879-883 (2003)
	2002
1		Clemens Heitzinger, Siegfried Selberherr: On the Topography Simulation of Memory Cell Trenches for Semiconductor Manufacturing Deposition Processes using the Level Set Method. ESM 2002: 653-660

Coauthor Index

1	Thomas Binder	[7]
2	Alena Bulyha	[12]
3	Johann Cervenka	[9]
4	Johannes Fellner	[5]
5	Tibor Grasser	[5]
6	Stefan Holzer	[5]
7	Andreas Hössinger	[2] [6] [9]
8	Norbert J. Mauser	[10] [11] [12]
9	Rainer Minixhofer	[5]
10	Toshimitsu Ohmine	[3]
11	Jong Mun Park	[8]
12	Wolfgang Pyka	[3]
13	Christian A. Ringhofer	[10] [11]
14	Siegfried Selberherr	[1] [2] [3] [4] [5] [6] [7] [8] [9] [10]
15	Alireza Sheikholeslami	[8]
16	Viktor Sverdlov	[10]
17	Toshiro Takase	[3]
18	Naoki Tamaoki	[3]
19	W. Wessner	[9]
20	Thomas Windbacher	[10]

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