A. El Hdiy

	2006
2		M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov: Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectronics Journal 37(2): 114-120 (2006)
	2004
1		R. Khlil, A. El Hdiy, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler: Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness. Microelectronics Reliability 44(3): 543-546 (2004)

Coauthor Index

1	I. V. Grekhov	[2]
2	D. Grgec	[2]
3	R. Khlil	[1] [2]
4	Bernd Meinerzhagen	[2]
5	A. F. Shulekin	[1] [2]
6	S. E. Tyaginov	[1] [2]
7	M. I. Vexler	[1] [2]

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