 | 2008 |
|---|
| 6 |       | J. Vobecký,
P. Hazdra:
Dynamic avalanche in diodes with local lifetime control by means of palladium.
Microelectronics Journal 39(6): 878-883 (2008) |
| 5 | | P. Hazdra,
J. Voves,
J. Oswald,
K. Kuldová,
A. Hospodková,
Eduard Hulicius,
Jirí Pangrác:
Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots.
Microelectronics Journal 39(8): 1070-1074 (2008) |
| 2006 |
|---|
| 4 | | P. Hazdra,
V. Komarnitskyy:
Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage.
Microelectronics Journal 37(3): 197-203 (2006) |
| 2004 |
|---|
| 3 | | P. Hazdra,
J. Vobecký,
H. Dorschner,
K. Brand:
Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons.
Microelectronics Journal 35(3): 249-257 (2004) |
| 2003 |
|---|
| 2 | | J. Vobecký,
P. Hazdra,
V. Záhlava:
Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode.
Microelectronics Reliability 43(4): 537-544 (2003) |
| 1 | | J. Vobecký,
P. Hazdra:
Advanced Local Lifetime Control for Higher Reliability of Power Devices.
Microelectronics Reliability 43(9-11): 1883-1888 (2003) |
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