Jun Hayakawa

	2010
4		Masashi Kamiyanagi, Fumitaka Iga, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh: Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit. IEICE Transactions 93-C(5): 602-607 (2010)
3		Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda, Katsuya Miura, Jun Hayakawa, Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh: Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits. IEICE Transactions 93-C(5): 608-613 (2010)
2		Riichiro Takemura, Takayuki Kawahara, Katsuya Miura, Hiroyuki Yamamoto, Jun Hayakawa, Nozomu Matsuzaki, Kazuo Ono, Michihiko Yamanouchi, Kenchi Ito, Hiromasa Takahashi, Shoji Ikeda, Haruhiro Hasegawa, Hideyuki Matsuoka, Hideo Ohno: A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme. J. Solid-State Circuits 45(4): 869-879 (2010)
	2009
1		Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu: MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues. DATE 2009: 433-435

Coauthor Index

1	Tetsuo Endoh	[1] [3] [4]
2	Takahiro Hanyu	[1] [3] [4]
3	Haruhiro Hasegawa	[2] [3] [4]
4	Fumitaka Iga	[3] [4]
5	Shoji Ikeda	[1] [2] [3] [4]
6	Kenchi Ito	[2]
7	Masashi Kamiyanagi	[3] [4]
8	Takayuki Kawahara	[2]
9	Shoun Matsunaga	[1]
10	Hideyuki Matsuoka	[2]
11	Nozomu Matsuzaki	[2]
12	Katsuya Miura	[1] [2] [3] [4]
13	Hideo Ohno	[1] [2] [3] [4]
14	Kazuo Ono	[2]
15	Hiromasa Takahashi	[2]
16	Riichiro Takemura	[2]
17	Hiroyuki Yamamoto	[2]
18	Michihiko Yamanouchi	[2]

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