 | 2003 |
| 37 |  | Charles F. Hawkins,
Ali Keshavarzi,
Jaume Segura:
A View from the Bottom: Nanometer Technology AC Parametric Failures -- Why, Where, and How to Detect.
DFT 2003: 267- |
| 36 |  | Oleg Semenov,
Arman Vassighi,
Manoj Sachdev,
Ali Keshavarzi,
Charles F. Hawkins:
Burn-in Temperature Projections for Deep Sub-micron Technologies.
ITC 2003: 95-104 |
| 35 |  | Ali Keshavarzi,
Kaushik Roy,
Charles F. Hawkins,
Vivek De:
Multiple-parameter CMOS IC testing with increased sensitivity for IDDQ.
IEEE Trans. VLSI Syst. 11(5): 863-870 (2003) |
| 2002 |
| 34 |  | Jaume Segura,
Ali Keshavarzi,
Jerry M. Soden,
Charles F. Hawkins:
Parametric Failures in CMOS ICs - A Defect-Based Analysis.
ITC 2002: 90-99 |
| 33 |  | Bartomeu Alorda,
M. Rosales,
Jerry M. Soden,
Charles F. Hawkins,
Jaume Segura:
Charge Based Transient Current Testing (CBT) for Submicron CMOS SRAMs.
ITC 2002: 947-953 |
| 32 |  | Ali Keshavarzi,
James Tschanz,
Siva Narendra,
Vivek De,
W. Robert Daasch,
Kaushik Roy,
Manoj Sachdev,
Charles F. Hawkins:
Leakage and Process Variation Effects in Current Testing on Future CMOS Circuits.
IEEE Design & Test of Computers 19(5): 36-43 (2002) |
| 2001 |
| 31 |  | Ivan de Paúl,
M. Rosales,
Bartomeu Alorda,
Jaume Segura,
Charles F. Hawkins,
Jerry M. Soden:
Defect Oriented Fault Diagnosis for Semiconductor Memories using Charge Analysis: Theory and Experiments.
VTS 2001: 286-291 |
| 2000 |
| 30 |  | Ali Keshavarzi,
Kaushik Roy,
Charles F. Hawkins,
Manoj Sachdev,
K. Soumyanath,
Vivek De:
Multiple-parameter CMOS IC testing with increased sensitivity for I_DDQ.
ITC 2000: 1051-1059 |
| 29 |  | Ali Keshavarzi,
Kaushik Roy,
Charles F. Hawkins:
Intrinsic leakage in deep submicron CMOS ICs-measurement-based test solutions.
IEEE Trans. VLSI Syst. 8(6): 717-723 (2000) |
| 1999 |
| 28 |  | Ali Keshavarzi,
Siva Narendra,
Shekhar Borkar,
Charles F. Hawkins,
Kaushik Roy,
Vivek De:
Technology scaling behavior of optimum reverse body bias for standby leakage power reduction in CMOS IC's.
ISLPED 1999: 252-254 |
| 27 |  | Charles F. Hawkins,
Jaume Segura:
Test and Reliability: Partners in IC Manufacturing, Part 1.
IEEE Design & Test of Computers 16(3): 64-71 (1999) |
| 26 |  | Charles F. Hawkins,
Jerry M. Soden:
Deep Submicron CMOS Current IC Testing: Is There a Future?
IEEE Design & Test of Computers 16(4): 14-15 (1999) |
| 25 |  | Charles F. Hawkins,
Jaume Segura,
Jerry M. Soden,
Ted Dellin:
Test and Reliability: Partners in IC Manufacturing, Part 2.
IEEE Design & Test of Computers 16(4): 66-73 (1999) |
| 1998 |
| 24 |  | Alan W. Righter,
Charles F. Hawkins,
Jerry M. Soden,
Peter C. Maxwell:
CMOS IC reliability indicators and burn-in economics.
ITC 1998: 194-203 |
| 1997 |
| 23 |  | Ali Keshavarzi,
Kaushik Roy,
Charles F. Hawkins:
Intrinsic Leakage in Low-Power Deep Submicron CMOS ICs.
ITC 1997: 146-155 |
| 22 |  | Edward I. Cole Jr.,
Jerry M. Soden,
Paiboon Tangyunyong,
Patrick L. Candelaria,
Richard W. Beegle,
Daniel L. Barton,
Christopher L. Henderson,
Charles F. Hawkins:
Transient Power Supply Voltage (VDDT) Analysis for Detecting IC Defects.
ITC 1997: 23-31 |
| 1996 |
| 21 |  | Jerry M. Soden,
Charles F. Hawkins:
IDDQ Testing: Issues Present and Future.
IEEE Design & Test of Computers 13(4): 61-65 (1996) |
| 20 |  | Jaume Segura,
Carol de Benito,
A. Rubio,
Charles F. Hawkins:
A detailed analysis and electrical modeling of gate oxide shorts in MOS transistors.
J. Electronic Testing 8(3): 229-239 (1996) |
| 1995 |
| 19 |  | Jaume Segura,
Carol de Benito,
A. Rubio,
Charles F. Hawkins:
A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level.
ITC 1995: 544-551 |
| 18 |  | Charles F. Hawkins,
Jerry M. Soden:
IDDQ Design and Test Advantages Propel Industry.
IEEE Design & Test of Computers 12(2): 40-41 (1995) |
| 1994 |
| 17 |  | Charles F. Hawkins,
Jerry M. Soden,
Alan W. Righter,
F. Joel Ferguson:
Defect Classes - An Overdue Paradigm for CMOS IC.
ITC 1994: 413-425 |
| 1993 |
| 16 |  | Richard H. Williams,
Charles F. Hawkins:
The Economics of Guardband Placement.
ITC 1993: 218-225 |
| 15 |  | Jerry M. Soden,
Charles F. Hawkins:
Quality Testing Requires Quality Thinking.
ITC 1993: 596 |
| 14 |  | Kenneth M. Wallquist,
Alan W. Righter,
Charles F. Hawkins:
A General Purpose IDDQ Measurement Circuit.
ITC 1993: 642-651 |
| 1992 |
| 13 |  | Richard H. Williams,
R. Glenn Wagner,
Charles F. Hawkins:
Testing Errors: Data and Calculations in an IC Manufacturing Process.
ITC 1992: 352-361 |
| 12 |  | Christopher L. Henderson,
Richard H. Williams,
Charles F. Hawkins:
Economic Impact of Type I Test Errors at System and Board Levels.
ITC 1992: 444-452 |
| 11 |  | Charles F. Hawkins:
System Testing: The Future for All of Us.
ITC 1992: 548 |
| 10 |  | Ravi K. Gulati,
Charles F. Hawkins:
Introduction.
J. Electronic Testing 3(4): 289 (1992) |
| 9 |  | Jerry M. Soden,
Charles F. Hawkins,
Ravi K. Gulati,
Weiwei Mao:
IDDQ testing: A review.
J. Electronic Testing 3(4): 291-303 (1992) |
| 1991 |
| 8 |  | Charles F. Hawkins,
Richard H. Williams:
EE Curriculum - Continuous Process Improvement?
ITC 1991: 1118 |
| 7 |  | Christopher L. Henderson,
Jerry M. Soden,
Charles F. Hawkins:
The Behavior and Testing Implications of CMOS IC Logic Gate Open Circuits.
ITC 1991: 302-310 |
| 1990 |
| 6 |  | Richard H. Williams,
Charles F. Hawkins:
Errors in testing.
ITC 1990: 1018-1027 |
| 5 |  | Jerry M. Soden,
Ronald R. Fritzemeier,
Charles F. Hawkins:
Zero defects or zero stuck-at faults-CMOS IC process improvement with IDDQ.
ITC 1990: 255-256 |
| 4 |  | Ronald R. Fritzemeier,
Jerry M. Soden,
R. Keith Treece,
Charles F. Hawkins:
Increased CMOS IC stuck-at fault coverage with reduced I DDQ test sets.
ITC 1990: 427-435 |
| 1989 |
| 3 |  | Jerry M. Soden,
R. Keith Treece,
Michael R. Taylor,
Charles F. Hawkins:
CMOS IC Stuck-Open Fault Electrical Effects and Design Considerations.
ITC 1989: 423-430 |
| 1986 |
| 2 |  | Jerry M. Soden,
Charles F. Hawkins:
Reliability and Electrical Properties of Gate Oxide Shorts in CMOS ICs.
ITC 1986: 443-451 |
| 1985 |
| 1 |  | Jerry M. Soden,
Charles F. Hawkins:
Electrical Characteristics and Testing Considerations for Gate Oxide Shorts in CMOS ICs.
ITC 1985: 544-557 |