 | 2011 |
| 6 |  | Tamotsu Hashizume:
Foreword.
IEICE Transactions 94-C(5): 675 (2011) |
| 2009 |
| 5 |  | Wancheng Zhang,
Nan-Jian Wu,
Tamotsu Hashizume,
Seiya Kasai:
Multiple-Valued Logic Gates Using Asymmetric Single-Electron Transistors.
ISMVL 2009: 337-342 |
| 2008 |
| 4 |  | Hong-Quan Zhao,
Seiya Kasai,
Tamotsu Hashizume,
Nan-Jian Wu:
Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures.
IEICE Transactions 91-C(7): 1063-1069 (2008) |
| 2007 |
| 3 |  | Abdul Manaf Hashim,
Seiya Kasai,
Tamotsu Hashizume,
Hideki Hasegawa:
Integration of interdigital-gated plasma wave device for proximity communication system application.
Microelectronics Journal 38(12): 1263-1267 (2007) |
| 2 |  | Abdul Manaf Hashim,
Seiya Kasai,
Kouichi Iizuka,
Tamotsu Hashizume,
Hideki Hasegawa:
Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier.
Microelectronics Journal 38(12): 1268-1272 (2007) |
| 2006 |
| 1 |  | Hideki Hasegawa,
Seiya Kasai,
Taketomo Sato,
Tamotsu Hashizume:
Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress.
IEICE Transactions 89-C(7): 874-882 (2006) |