 | 2011 |
| 3 |  | Makoto Miyamura,
Shogo Nakaya,
Munehiro Tada,
Toshitsugu Sakamoto,
Koichiro Okamoto,
Naoki Banno,
Shinji Ishida,
Kimihiko Ito,
Hiromitsu Hada,
Noboru Sakimura,
Tadahiko Sugibayashi,
Masato Motomura:
Programmable cell array using rewritable solid-electrolyte switch integrated in 90nm CMOS.
ISSCC 2011: 228-229 |
| 2009 |
| 2 |  | Ryusuke Nebashi,
Noboru Sakimura,
Hiroaki Honjo,
Shinsaku Saito,
Yuichi Ito,
Sadahiko Miura,
Yuko Kato,
Kaoru Mori,
Yasuaki Ozaki,
Yosuke Kobayashi,
Norikazu Ohshima,
Keizo Kinoshita,
Tetsuhiro Suzuki,
Kiyokazu Nagahara,
Nobuyuki Ishiwata,
Katsumi Suemitsu,
Shunsuke Fukami,
Hiromitsu Hada,
Tadahiko Sugibayashi,
Naoki Kasai:
A 90nm 12ns 32Mb 2T1MTJ MRAM.
ISSCC 2009: 462-463 |
| 2007 |
| 1 |  | Takeshi Honda,
Noboru Sakimura,
Tadahiko Sugibayashi,
Naoki Kasai,
Hiromitsu Hada,
Shuichi Tahara:
Writing Circuitry for Toggle MRAM to Screen Intermittent Failure Mode.
IEICE Transactions 90-C(2): 531-535 (2007) |