A. Gushterov

	2006
1		A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann: Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. Microelectronics Journal 37(1): 64-70 (2006)

Coauthor Index

1	F. Hamelmann	[1]
2	U. Heinzmann	[1]
3	T. Nikolova	[1]
4	S. Simeonov	[1]
5	A. Szekeres	[1]

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