 | 2012 |
|---|
| 16 |       | Neha Verma,
Jyotika Jogi,
Mridula Gupta,
R. S. Gupta:
Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT.
UKSim 2012: 660-664 |
| 15 | | Pujarini Ghosh,
Subhasis Haldar,
R. S. Gupta,
Mridula Gupta:
An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET.
Microelectronics Journal 43(1): 17-24 (2012) |
| 14 | | Priyanka Malik,
R. S. Gupta,
Rishu Chaujar,
Mridula Gupta:
AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications.
Microelectronics Reliability 52(1): 151-158 (2012) |
| 2011 |
|---|
| 13 | | Sona P. Kumar,
Anju Agrawal,
Rishu Chaujar,
R. S. Gupta,
Mridula Gupta:
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor.
Microelectronics Reliability 51(3): 587-596 (2011) |
| 2009 |
|---|
| 12 | | S. U. Siddiqui,
N. K. Verma,
Shailesh Mishra,
R. S. Gupta:
Mathematical modelling of pulsatile flow of Casson's fluid in arterial stenosis.
Applied Mathematics and Computation 210(1): 1-10 (2009) |
| 11 | | Servin Rathi,
Jyotika Jogi,
Mridula Gupta,
R. S. Gupta:
Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT.
Microelectronics Reliability 49(12): 1508-1514 (2009) |
| 10 | | Rupendra Kumar Sharma,
Ritesh Gupta,
Mridula Gupta,
R. S. Gupta:
Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect.
Microelectronics Reliability 49(7): 699-706 (2009) |
| 2008 |
|---|
| 9 | | Sona P. Kumar,
Anju Agrawal,
Rishu Chaujar,
Mridula Gupta,
R. S. Gupta:
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency.
Microelectronics Journal 39(12): 1416-1424 (2008) |
| 2007 |
|---|
| 8 | | Sona P. Kumar,
Anju Agrawal,
Rishu Chaujar,
Sneha Kabra,
Mridula Gupta,
R. S. Gupta:
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation.
Microelectronics Journal 38(10-11): 1013-1020 (2007) |
| 7 | | Harsupreet Kaur,
Sneha Kabra,
Subhasis Haldar,
R. S. Gupta:
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET.
Microelectronics Journal 38(3): 352-359 (2007) |
| 6 | | Sneha Kabra,
Harsupreet Kaur,
Subhasis Haldar,
Mridula Gupta,
R. S. Gupta:
Two-dimensional subthreshold analysis of sub-micron GaN MESFET.
Microelectronics Journal 38(4-5): 547-555 (2007) |
| 5 | | Parvesh Gangwani,
Sujata Pandey,
Subhasis Haldar,
Mridula Gupta,
R. S. Gupta:
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications.
Microelectronics Journal 38(8-9): 848-854 (2007) |
| 2006 |
|---|
| 4 | | Sona P. Kumar,
Anju Agrawal,
Sneha Kabra,
Mridula Gupta,
R. S. Gupta:
An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications.
Microelectronics Journal 37(11): 1339-1346 (2006) |
| 3 | | Sneha Kabra,
Harsupreet Kaur,
Ritesh Gupta,
Subhasis Haldar,
Mridula Gupta,
R. S. Gupta:
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications.
Microelectronics Journal 37(7): 620-626 (2006) |
| 2 | | Ritesh Gupta,
Sandeep k. Aggarwal,
Mridula Gupta,
R. S. Gupta:
An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability.
Microelectronics Journal 37(9): 919-929 (2006) |
| 2003 |
|---|
| 1 | | N. Kaushik,
A. Kranti,
Mridula Gupta,
R. S. Gupta:
Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor.
Microelectronics Journal 34(1): 77-83 (2003) |
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