G. Guillot

	2009
2		M. Gassoumi, J. M. Bluet, C. Gaquière, G. Guillot, H. Maaref: Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. Microelectronics Journal 40(8): 1161-1165 (2009)
	2006
1		N. Sghaier, M. Trabelsi, N. Yacoubi, J. M. Bluet, A. Souifi, G. Guillot, C. Gaquière, J. C. DeJaeger: Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectronics Journal 37(4): 363-370 (2006)

Coauthor Index

1	J. M. Bluet	[1] [2]
2	J. C. DeJaeger	[1]
3	C. Gaquière	[1] [2]
4	M. Gassoumi	[2]
5	H. Maaref	[2]
6	N. Sghaier	[1]
7	A. Souifi (Abdelkader Souifi)	[1]
8	M. Trabelsi	[1]
9	N. Yacoubi	[1]

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