I. V. Grekhov

	2007
4		I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler: Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon. Microelectronics Reliability 47(4-5): 669-672 (2007)
	2006
3		M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov: Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectronics Journal 37(2): 114-120 (2006)
2		S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov: The post-damage behavior of a MOS tunnel emitter transistor. Microelectronics Reliability 46(7): 1035-1041 (2006)
	2001
1		N. Asli, M. I. Vexler, A. F. Shulekin, P. D. Yoder, I. V. Grekhov, P. Seegebrecht: Threshold energies in the light emission characteristics of silicon MOS tunnel diodes. Microelectronics Reliability 41(7): 1071-1076 (2001)

Coauthor Index

1	N. Asli	[1]
2	D. Grgec	[3]
3	A. El Hdiy	[3]
4	G. G. Kareva	[4]
5	R. Khlil	[3]
6	Bernd Meinerzhagen	[3]
7	P. Seegebrecht	[1]
8	A. F. Shulekin	[1] [2] [3]
9	S. E. Tyaginov	[2] [3] [4]
10	M. I. Vexler	[1] [2] [3] [4]
11	P. D. Yoder	[1]

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