S. Golubovic

	2011
12		I. Manic, D. Dankovic, A. Prijic, V. Davidovic, S. Djoric-Veljkovic, S. Golubovic, Z. Prijic, Ninoslav Stojadinovic: NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions. Microelectronics Reliability 51(9-11): 1540-1543 (2011)
	2010
11		Ninoslav Stojadinovic, D. Dankovic, I. Manic, A. Prijic, V. Davidovic, S. Djoric-Veljkovic, S. Golubovic, Z. Prijic: Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress. Microelectronics Reliability 50(9-11): 1278-1282 (2010)
	2009
10		I. Manic, D. Dankovic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic: Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs. Microelectronics Reliability 49(9-11): 1003-1007 (2009)
	2008
9		D. Dankovic, I. Manic, V. Davidovic, S. Djoric-Veljkovic, S. Golubovic, Ninoslav Stojadinovic: Negative bias temperature instability in n-channel power VDMOSFETs. Microelectronics Reliability 48(8-9): 1313-1317 (2008)
	2007
8		D. Dankovic, I. Manic, V. Davidovic, S. Djoric-Veljkovic, S. Golubovic, Ninoslav Stojadinovic: Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs. Microelectronics Reliability 47(9-11): 1400-1405 (2007)
	2006
7		D. Dankovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic: NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs. Microelectronics Reliability 46(9-11): 1828-1833 (2006)
	2005
6		Ninoslav Stojadinovic, I. Manic, V. Davidovic, D. Dankovic, S. Djoric-Veljkovic, S. Golubovic, S. Dimitrijev: Effects of electrical stressing in power VDMOSFETs. Microelectronics Reliability 45(1): 115-122 (2005)
5		Ninoslav Stojadinovic, D. Dankovic, S. Djoric-Veljkovic, V. Davidovic, I. Manic, S. Golubovic: Negative bias temperature instability mechanisms in p-channel power VDMOSFETs. Microelectronics Reliability 45(9-11): 1343-1348 (2005)
	2003
4		S. Djoric-Veljkovic, I. Manic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic: Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs. Microelectronics Reliability 43(9-11): 1455-1460 (2003)
	2002
3		Ninoslav Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, S. Dimitrijev: Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs. Microelectronics Reliability 42(4-5): 669-677 (2002)
2		Ninoslav Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, D. Dankovic, S. Golubovic, S. Dimitrijev: Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs. Microelectronics Reliability 42(9-11): 1465-1468 (2002)
	2001
1		Ninoslav Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, S. Dimitrijev: Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs. Microelectronics Reliability 41(9-10): 1373-1378 (2001)

Coauthor Index

1	D. Dankovic	[2] [5] [6] [7] [8] [9] [10] [11] [12]
2	V. Davidovic	[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12]
3	S. Dimitrijev	[1] [2] [3] [6]
4	S. Djoric-Veljkovic	[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12]
5	I. Manic	[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12]
6	A. Prijic	[11] [12]
7	Z. Prijic	[11] [12]
8	Ninoslav Stojadinovic	[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12]

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