Philippe Godignon

	2008
6		V. Banu, P. Brosselard, Xavier Jordà, J. Montserrat, Philippe Godignon, José Millán: Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectronics Reliability 48(8-9): 1444-1448 (2008)
	2007
5		Gemma Gabriel, Ivan Erill, Jaume Caro, Rodrigo Gómez, Dolors Riera, Rosa Villa, Philippe Godignon: Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications. Microelectronics Journal 38(3): 406-415 (2007)
4		Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán: Coupled electro-thermal simulation of a DC/DC converter. Microelectronics Reliability 47(12): 2114-2121 (2007)
	2004
3		X. Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán: Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. Microelectronics Journal 35(10): 841-847 (2004)
2		A. Pérez-Tomás, Xavier Jordà, Philippe Godignon, J. L. Gálvez, Miquel Vellvehí, José Millán: IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. Microelectronics Journal 35(8): 659-666 (2004)
	2001
1		M. Badila, Philippe Godignon, José Millán, S. Berberich, G. Brezeanu: The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectronics Reliability 41(7): 1015-1018 (2001)

Coauthor Index

1	M. Badila	[1]
2	V. Banu	[6]
3	S. Berberich	[1]
4	G. Brezeanu	[1]
5	P. Brosselard	[6]
6	Jaume Caro	[5]
7	Ivan Erill	[5]
8	Carles Ferrer	[4]
9	Gemma Gabriel	[5]
10	J. L. Gálvez	[2]
11	Rodrigo Gómez	[5]
12	Xavier Jordà	[2] [3] [4] [6]
13	N. Mestres	[3]
14	José Millán	[1] [2] [3] [4] [6]
15	J. Montserrat	[6]
16	A. Pérez-Tomás	[2]
17	X. Perpiñà	[3]
18	Dolors Riera	[5]
19	Miquel Vellvehí	[2] [3] [4]
20	Rosa Villa	[5]

Colors in the list of coauthors

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