 | 2012 |
| 11 |  | M. Bagatin,
Simone Gerardin,
Alessandro Paccagnella,
C. Andreani,
G. Gorini,
C. D. Frost:
Temperature dependence of neutron-induced soft errors in SRAMs.
Microelectronics Reliability 52(1): 289-293 (2012) |
| 2010 |
| 10 |  | M. Bagatin,
Simone Gerardin,
Alessandro Paccagnella,
G. Cellere,
F. Irom,
D. N. Nguyen:
Destructive events in NAND Flash memories irradiated with heavy ions.
Microelectronics Reliability 50(9-11): 1832-1836 (2010) |
| 9 |  | Simone Gerardin,
M. Bagatin,
Alessandro Paccagnella,
G. Cellere,
A. Visconti,
M. Bonanomi:
Impact of total dose on heavy-ion upsets in floating gate arrays.
Microelectronics Reliability 50(9-11): 1837-1841 (2010) |
| 2009 |
| 8 |  | Paolo Rech,
Simone Gerardin,
Alessandro Paccagnella,
Paolo Bernardi,
Michelangelo Grosso,
Matteo Sonza Reorda,
Davide Appello:
Evaluating Alpha-induced soft errors in embedded microprocessors.
IOLTS 2009: 69-74 |
| 7 |  | Davide Appello,
Paolo Bernardi,
Simone Gerardin,
Michelangelo Grosso,
Alessandro Paccagnella,
Paolo Rech,
Matteo Sonza Reorda:
DfT Reuse for Low-Cost Radiation Testing of SoCs: A Case Study.
VTS 2009: 276-281 |
| 2008 |
| 6 |  | Niccolò Battezzati,
Simone Gerardin,
Andrea Manuzzato,
Alessandro Paccagnella,
Sana Rezgui,
Luca Sterpone,
Massimo Violante:
On the Evaluation of Radiation-Induced Transient Faults in Flash-Based FPGAs.
IOLTS 2008: 135-140 |
| 2007 |
| 5 |  | Andrea Manuzzato,
Paolo Rech,
Simone Gerardin,
Alessandro Paccagnella,
Luca Sterpone,
Massimo Violante:
Sensitivity Evaluation of TMR-Hardened Circuits to Multiple SEUs Induced by Alpha Particles in Commercial SRAM-Based FPGAs.
DFT 2007: 79-86 |
| 4 |  | M. Bagatin,
G. Cellere,
Simone Gerardin,
Alessandro Paccagnella,
A. Visconti,
S. Beltrami,
M. Maccarrone:
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions.
IOLTS 2007: 146-151 |
| 3 |  | J. Martín-Martínez,
Simone Gerardin,
R. Rodríguez,
M. Nafría,
X. Aymerich,
A. Cester,
Alessandro Paccagnella,
G. Ghidini:
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs.
Microelectronics Reliability 47(9-11): 1349-1352 (2007) |
| 2006 |
| 2 |  | Simone Gerardin,
A. Griffoni,
A. Cester,
Alessandro Paccagnella,
G. Ghidini:
Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress.
Microelectronics Reliability 46(9-11): 1669-1672 (2006) |
| 1 |  | Francesca Danesin,
Franco Zanon,
Simone Gerardin,
F. Rampazzo,
Gaudenzio Meneghesso,
Enrico Zanoni,
Alessandro Paccagnella:
Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.
Microelectronics Reliability 46(9-11): 1750-1753 (2006) |