 | 2011 |
|---|
| 7 |       | M. A. Belaïd,
M. Gares,
K. Daoud,
Ph. Eudeline:
S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects.
Microelectronics Reliability 51(9-11): 1551-1556 (2011) |
| 2007 |
|---|
| 6 | | M. A. Belaïd,
K. Ketata,
K. Mourgues,
M. Gares,
M. Masmoudi,
J. Marcon:
Reliability study of power RF LDMOS device under thermal stress.
Microelectronics Journal 38(2): 164-170 (2007) |
| 5 | | M. A. Belaïd,
K. Ketata,
M. Gares,
K. Mourgues,
M. Masmoudi,
J. Marcon:
Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests.
Microelectronics Reliability 47(1): 59-64 (2007) |
| 4 | | M. Gares,
M. A. Belaïd,
H. Maanane,
M. Masmoudi,
J. Marcon,
K. Mourgues,
Ph. Eudeline:
Study of hot-carrier effects on power RF LDMOS device reliability.
Microelectronics Reliability 47(9-11): 1394-1399 (2007) |
| 2006 |
|---|
| 3 | | M. Gares,
H. Maanane,
M. A. Belaïd,
M. Masmoudi,
J. Marcon,
K. Mourgues,
P. Bertram,
Ph. Eudeline:
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance.
CCECE 2006: 382-385 |
| 2 | | M. A. Belaïd,
K. Ketata,
M. Masmoudi,
M. Gares,
H. Maanane,
J. Marcon:
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests.
Microelectronics Reliability 46(9-11): 1800-1805 (2006) |
| 1 | | M. Gares,
H. Maanane,
M. Masmoudi,
P. Bertram,
J. Marcon,
M. A. Belaïd,
K. Mourgues,
C. Tolant,
Ph. Eudeline:
Hot carrier reliability of RF N- LDMOS for S Band radar application.
Microelectronics Reliability 46(9-11): 1806-1811 (2006) |
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