 | 2011 |
|---|
| 7 |       | Denise C. Lugo Muñoz,
Juan Muci,
Adelmo Ortiz-Conde,
Francisco J. García-Sánchez,
Michelly de Souza,
Marcelo A. Pavanello:
An explicit multi-exponential model for semiconductor junctions with series and shunt resistances.
Microelectronics Reliability 51(12): 2044-2048 (2011) |
| 2010 |
|---|
| 6 | | Adelmo Ortiz-Conde,
Francisco J. García-Sánchez,
Juin J. Liou,
Ching-Sung Ho:
Integration-based approach to evaluate the sub-threshold slope of MOSFETs.
Microelectronics Reliability 50(2): 312-315 (2010) |
| 2009 |
|---|
| 5 | | Adelmo Ortiz-Conde,
Francisco J. García-Sánchez,
Juan Muci,
Denise C. Lugo Muñoz,
Álvaro D. Latorre Rey,
Ching-Sung Ho,
Juin J. Liou:
Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction.
Microelectronics Reliability 49(7): 689-692 (2009) |
| 2006 |
|---|
| 4 | | Francisco J. García-Sánchez,
Adelmo Ortiz-Conde,
Juan Muci:
Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria.
Microelectronics Reliability 46(5-6): 731-742 (2006) |
| 2002 |
|---|
| 3 | | Juin J. Liou,
R. Shireen,
Adelmo Ortiz-Conde,
Francisco J. García-Sánchez,
Antonio Cerdeira,
Xiaofang Gao,
Xuecheng Zou,
Ching-Sung Ho:
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.
Microelectronics Reliability 42(3): 343-347 (2002) |
| 2 | | Adelmo Ortiz-Conde,
Francisco J. García-Sánchez,
Juin J. Liou,
Antonio Cerdeira,
Magali Estrada,
Y. Yue:
A review of recent MOSFET threshold voltage extraction methods.
Microelectronics Reliability 42(4-5): 583-596 (2002) |
| 2001 |
|---|
| 1 | | Magali Estrada,
Antonio Cerdeira,
Adelmo Ortiz-Conde,
Francisco J. García-Sánchez:
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction.
Microelectronics Reliability 41(4): 605-610 (2001) |
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