 | 2011 |
| 9 |  | Antonio J. García-Loureiro,
Natalia Seoane,
Manuel Aldegunde,
R. Valin,
Asen Asenov,
A. Martinez,
Karol Kalna:
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors.
IEEE Trans. on CAD of Integrated Circuits and Systems 30(6): 841-851 (2011) |
| 2010 |
| 8 |  | Manuel Aldegunde,
Natalia Seoane,
Antonio J. García-Loureiro,
Karol Kalna:
Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes.
Computer Physics Communications 181(1): 24-34 (2010) |
| 2009 |
| 7 |  | R. Valin,
Natalia Seoane,
Manuel Aldegunde,
Antonio J. García-Loureiro:
The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics.
eScience 2009: 271-276 |
| 2007 |
| 6 |  | Manuel Aldegunde,
Antonio J. García-Loureiro,
Karol Kalna:
Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs.
LSSC 2007: 115-122 |
| 2006 |
| 5 |  | Natalia Seoane,
Antonio J. García-Loureiro:
Optimisation of the Parallel Performance of a 3D Device Simulator for HEMTs.
ISPA 2006: 859-868 |
| 2005 |
| 4 |  | Natalia Seoane,
Antonio J. García-Loureiro,
Karol Kalna,
Asen Asenov:
A High-Performance Parallel Device Simulator for High Electron Mobility Transistors.
PARCO 2005: 407-414 |
| 3 |  | Juan J. Pombo,
Manuel Aldegunde,
Antonio J. García-Loureiro:
Optimization of an Octree-based 3-D Parallel Meshing Algorithm for the Simulation of Small-Feature Semiconductor Devices.
PARCO 2005: 439-446 |
| 2004 |
| 2 |  | Natalia Seoane,
Antonio J. García-Loureiro:
Analysis of Parallel Numerical Libraries to Solve the 3D Electron Continuity Equation.
International Conference on Computational Science 2004: 590-593 |
| 1998 |
| 1 |  | Antonio J. García-Loureiro,
Tomás F. Pena,
J. M. López-González,
Ll. Prat Viñas:
Parallel Preconditioners for Solving Nonsymmetric Linear Systems.
VECPAR 1998: 128-141 |