C. Gaquière

	2009
3		M. Gassoumi, J. M. Bluet, C. Gaquière, G. Guillot, H. Maaref: Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. Microelectronics Journal 40(8): 1161-1165 (2009)
	2006
2		N. Sghaier, M. Trabelsi, N. Yacoubi, J. M. Bluet, A. Souifi, G. Guillot, C. Gaquière, J. C. DeJaeger: Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectronics Journal 37(4): 363-370 (2006)
	2003
1		A. Curutchet, N. Malbert, Nathalie Labat, André Touboul, C. Gaquière, A. Minko, M. Uren: Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectronics Reliability 43(9-11): 1713-1718 (2003)

Coauthor Index

1	J. M. Bluet	[2] [3]
2	A. Curutchet	[1]
3	J. C. DeJaeger	[2]
4	M. Gassoumi	[3]
5	G. Guillot	[2] [3]
6	Nathalie Labat	[1]
7	H. Maaref	[3]
8	N. Malbert	[1]
9	A. Minko	[1]
10	N. Sghaier	[2]
11	A. Souifi (Abdelkader Souifi)	[2]
12	André Touboul	[1]
13	M. Trabelsi	[2]
14	M. Uren	[1]
15	N. Yacoubi	[2]

Colors in the list of coauthors

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