Yoshino K. Fukai

	2009
3		Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki: Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal. Microelectronics Reliability 49(4): 357-364 (2009)
	2008
2		Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, Shoji Yamahata: Highly Reliable Submicron InP-Based HBTs with over 300-GHz ft. IEICE Transactions 91-C(7): 1084-1090 (2008)
	2002
1		Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama: Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. Microelectronics Reliability 42(1): 47-52 (2002)

Coauthor Index

1	Takatomo Enoki	[3]
2	Minoru Ida	[3]
3	Norihide Kashio	[2] [3]
4	Kenji Kurishima	[2] [3]
5	Tetsuya Suemitsu	[1]
6	Hiroki Sugiyama	[1]
7	Kazuo Watanabe	[1]
8	Shoji Yamahata	[2] [3]
9	Haruki Yokoyama	[1]

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