 | 2012 |
| 11 |  | Chao-Hung Chen,
Hsien-Chin Chiu,
Chih-Wei Yang,
Jeffrey S. Fu,
Feng-Tso Chien:
Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer.
Microelectronics Reliability 52(1): 147-150 (2012) |
| 2011 |
| 10 |  | Hsuan-Ling Kao,
S. P. Shih,
C. S. Yeh,
C. M. Yang,
C. Y. Ke,
Y. C. Lee,
Jeffrey S. Fu,
Li-Chun Chang:
A Ka-band triple push coupled pair VCO using 0.18-μm CMOS technology.
WOCN 2011: 1-4 |
| 9 |  | Hsien-Chin Chiu,
Chia-Shih Cheng,
Hsuan-Ling Kao,
Jeffrey S. Fu,
Qiang Cui,
Juin J. Liou:
A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology.
Microelectronics Reliability 51(12): 2137-2142 (2011) |
| 8 |  | Hsien-Chin Chiu,
Chao-Wei Lin,
Che-Kai Lin,
Hsuan-Ling Kao,
Jeffrey S. Fu:
Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs.
Microelectronics Reliability 51(12): 2163-2167 (2011) |
| 7 |  | Chao-Wei Lin,
Hsien-Chin Chiu,
Che-Kai Lin,
Jeffrey S. Fu:
High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P2S5/(NH4)2SX + UV interface treatment.
Microelectronics Reliability 51(2): 381-385 (2011) |
| 6 |  | Hsien-Chin Chiu,
Chao-Hung Chen,
Che-Kai Lin,
Jeffrey S. Fu:
High electrical performance liquid-phase HBr oxidation gate insulator of InAlAs/InGaAs metamorphic MOS-mHEMT.
Microelectronics Reliability 51(8): 1337-1341 (2011) |
| 2010 |
| 5 |  | Jeffrey S. Fu,
Dong-Hua Yang,
Chin-I. Yeh,
Nemai C. Karmakar,
Jui-Ching Cheng,
Kuo-Sheng Chin,
Hsien-Chin Chiu,
Jian Kang Xiao:
Electromechanical controlled phased array dumbbell EBG beam steerer.
Microelectronics Reliability 2010: 2093-2097 |
| 4 |  | Hsien-Chin Chiu,
Chao-Hung Chen,
Chih-Wei Yang,
Jeffrey S. Fu,
Cheng-Shun Wang:
Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers.
Microelectronics Reliability 50(5): 631-634 (2010) |
| 3 |  | Hsien-Chin Chiu,
Chih-Wei Yang,
Chao-Hung Chen,
Che-Kai Lin,
Jeffrey S. Fu,
Hsing-Yuan Tu,
Shiang-Feng Tang:
High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology.
Microelectronics Reliability 50(6): 847-850 (2010) |
| 2009 |
| 2 |  | Y. C. Chang,
Hsuan-Ling Kao,
C. H. Kao,
C. H. Yang,
Jeffrey S. Fu,
Nemai C. Karmakar,
Li-Chun Chang:
0.18 µm CMOS UWB LNA with new feedback configuration for optimization low noise, high gain and small area.
DDECS 2009: 194-197 |
| 1 |  | Chien-Cheng Wei,
Hsien-Chin Chiu,
Yi-Tzu Yang,
Jeffrey S. Fu:
A novel complementary Colpitts differential CMOS VCO with low phase noise performance.
Microelectronics Journal 40(12): 1698-1704 (2009) |