 | 2012 |
| 10 |  | P. Fernández-Martínez,
F. R. Palomo,
S. Díez,
S. Hidalgo,
M. Ullán,
D. Flores,
Roland Sorge:
Simulation methodology for dose effects in lateral DMOS transistors.
Microelectronics Journal 43(1): 50-56 (2012) |
| 2008 |
| 9 |  | I. Cortés,
P. Fernández-Martínez,
D. Flores,
S. Hidalgo,
J. Rebollo:
Superjunction LDMOS on thick-SOI technology for RF applications.
Microelectronics Journal 39(6): 922-927 (2008) |
| 8 |  | I. Cortés,
P. Fernández-Martínez,
D. Flores,
S. Hidalgo,
J. Rebollo:
Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors.
Microelectronics Reliability 48(2): 173-180 (2008) |
| 2005 |
| 7 |  | I. Cortés,
J. Roig,
D. Flores,
J. Urresti,
S. Hidalgo,
J. Rebollo:
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.
Microelectronics Reliability 45(3-4): 493-498 (2005) |
| 6 |  | J. Urresti,
S. Hidalgo,
D. Flores,
J. Roig,
I. Cortés,
J. Rebollo:
Lateral punch-through TVS devices for on-chip protection in low-voltage applications.
Microelectronics Reliability 45(7-8): 1181-1186 (2005) |
| 2004 |
| 5 |  | Miquel Vellvehí,
D. Flores,
Xavier Jordà,
S. Hidalgo,
J. Rebollo,
L. Coulbeck,
P. Waind:
Design considerations for 6.5 kV IGBT devices.
Microelectronics Journal 35(3): 269-275 (2004) |
| 4 |  | J. Roig,
D. Flores,
S. Hidalgo,
J. Rebollo,
José Millán:
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications.
Microelectronics Journal 35(3): 291-297 (2004) |
| 2003 |
| 3 |  | J. Urresti,
S. Hidalgo,
D. Flores,
J. Roig,
J. Rebollo,
I. Mazarredo:
Optimisation of very low voltage TVS protection devices.
Microelectronics Journal 34(9): 809-813 (2003) |
| 2 |  | S. Hidalgo,
D. Flores,
I. Obieta,
I. Mazarredo:
Passivation and packaging of positive bevelled edge termination and related electrical stability.
Microelectronics Reliability 43(3): 413-420 (2003) |
| 2002 |
| 1 |  | J. Roig,
D. Flores,
Miquel Vellvehí,
J. Rebollo,
José Millán:
Reduction of self-heating effect on SOIM devices.
Microelectronics Reliability 42(1): 61-66 (2002) |