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| 2007 | ||
|---|---|---|
| 1 | Aly E. Salama, Sherif M. Sharroush, Mahmoud Y. Fekry: Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories. ISCAS 2007: 2268-2271 | |
| 1 | Aly E. Salama | [1] |
| 2 | Sherif M. Sharroush | [1] |
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