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| 2001 | ||
|---|---|---|
| 1 | M. Zmeck, J. C. H. Phang, A. Bettiol, T. Osipowicz, F. Watt, L. J. Balk, F.-J. Niedernostheide, Hans-Joachim Schulze, E. Falck, R. Barthelmess: Analysis of high-power devices using proton beam induced charge microscopy. Microelectronics Reliability 41(9-10): 1519-1524 (2001) | |
| 1 | L. J. Balk | [1] |
| 2 | R. Barthelmess | [1] |
| 3 | A. Bettiol | [1] |
| 4 | F.-J. Niedernostheide | [1] |
| 5 | T. Osipowicz | [1] |
| 6 | J. C. H. Phang | [1] |
| 7 | Hans-Joachim Schulze | [1] |
| 8 | F. Watt | [1] |
| 9 | M. Zmeck | [1] |
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